MOVPE growth of semipolar III-nitride semiconductors on CVD graphene

Journal of Crystal Growth

Volumn 372, Issue , 2013, Pages 105-108

  Gupta, Priti ^a   Rahman, A A ^a   Hatui, Nirupam ^a   Gokhale, M R ^a   Deshmukh, Mandar M ^a   Bhattacharya, Arnab ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

A3. Low pressure metalorganic vapor phase epitaxy B1. Graphene B1. Nitrides B2. Semiconducting III V materials

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; GROWTH CONDITIONS; III-NITRIDE SEMICONDUCTORS; MOVPE GROWTH; NITRIDE LAYERS; POLYCRYSTALLINE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SEMI CONDUCTING III-V MATERIALS;

ALUMINUM NITRIDE; AMORPHOUS MATERIALS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; GRAPHENE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; POLYCRYSTALLINE MATERIALS; VAPORS;

SEMICONDUCTOR GROWTH;

EID: 84876266461     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.03.020     Document Type: Article

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