Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN

Microelectronics Journal

Volumn 37, Issue 5, 2006, Pages 417-420

  Liu, K T ^a   Su, Y K ^b   Chuang, R W ^b   Chang, S J ^b   Horikoshi, Y ^c  

^a CHENG SHIU UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Hall effect measurement; P implantation; Surface composition; XPS

Indexed keywords

DOPING (ADDITIVES); FERMI LEVEL; GALLIUM NITRIDE; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

HALL EFFECT MEASUREMENT; P IMPLANTATION; SURFACE BARRIER HEIGHT;

PHOSPHORUS;

EID: 33644770382     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.05.026     Document Type: Article

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