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Volumn 104, Issue 21, 2014, Pages

Graphene in ohmic contact for both n -GaN and p -GaN

(9) Zhong, Haijian a Liu, Zhenghui a Shi, Lin a Xu, Gengzhao a Fan, Yingmin a Huang, Zengli a Wang, Jianfeng a,b Ren, Guoqiang a,b Xu, Ke a,b

a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

b Suzhou Nanowin Science and Technology Co Ltd (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC CONTACTORS; GRAPHENE; OHMIC CONTACTS;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRODE MATERIAL; LOCAL WORK FUNCTION; OHMIC BEHAVIOR; P-TYPE GAN; SCHOTTKY CHARACTERISTICS; SINGLE LAYER;

GALLIUM NITRIDE;

EID: 84901750686 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4880732 Document Type: Article

Times cited : (26)

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