Measurement of the electrostatic edge effect in wurtzite GaN nanowires

Applied Physics Letters

Volumn 105, Issue 21, 2014, Pages

  Henning, Alex ^a   Klein, Benjamin ^b   Bertness, Kris A ^c   Blanchard, Paul T ^c   Sanford, Norman A ^c   Rosenwaks, Yossi ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON AFFINITY; ELECTRONIC STRUCTURE; ELECTROSTATICS; GALLIUM NITRIDE; NANOWIRES; OPTOELECTRONIC DEVICES; UNCERTAINTY ANALYSIS; ZINC SULFIDE;

ELECTROSTATIC EFFECT; ELECTROSTATIC MODELING; ELECTROSTATIC SIMULATIONS; KELVIN PROBE FORCE MICROSCOPY; POTENTIAL DIFFERENCE; STATE CONCENTRATION; SURFACE BAND BENDING; WURTZITE GAN NANOWIRES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84912122190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4902873     Document Type: Article

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