Influence of ammoniating time on the microstructure of Mg-doped GaN nanowires

Materials Science and Engineering: B

Volumn 167, Issue 2, 2010, Pages 80-84

  Shi, Feng ^a   Zhang, Dongdong ^a   Xue, Chengshan ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Ammoniating time; Mg doped GaN nanowires; Microstructure

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MAGNESIUM COMPOUNDS; NANOWIRES; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIATING TIME; GAN NANOWIRES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON-SPUTTERING; MG THIN FILMS; MG-DOPED GAN NANOWIRE; MG-DOPING; SI (1 1 1); SPECTROPHOTOMETER SCANNING; X- RAY DIFFRACTIONS;

MICROSTRUCTURE;

EID: 77649186389     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.01.037     Document Type: Article

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