Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Journal of Crystal Growth

Volumn 353, Issue 1, 2012, Pages 68-71

  Nowak, G ^a   Weyher, J L ^a   Khachapuridze, A ^a   Grzegory, I ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A1. Atomic force microscopy; A3. Hydride vapor phase epitaxy; B1. Gallium compounds; B1. Nitrides

Indexed keywords

BULK CRYSTALS; BULK GROWTH; ETCH DEPTH; GAN LAYERS; HIGH ELECTRON CONCENTRATION; HYDRIDE VAPOR PHASE EPITAXY; KELVIN PROBE FORCE MICROSCOPY; KELVIN PROBE MICROSCOPY; PHOTO-ETCHING; SAPPHIRE TEMPLATES;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; ETCHING; HYDRATES; PROBES; SAPPHIRE; SURFACE POTENTIAL; VAPORS;

GALLIUM NITRIDE;

EID: 84861610403     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.04.025     Document Type: Article

References (23)

1. J.J. Kopanski, J.F. Marchiando, and J.R. Lowney Materials Science and Engineering B44 1997 46
2. P. De Wolf, E. Brazel, and A. Erickson Materials Science in Semiconductor Processing 4 2001 71 76
3. S.B. Kuntzea, E.H. Sargent, J.K. White, K. Hinzer, St.J. Dixon-Warren, and D. Ban Applied Physics Letters 86 2005 081111
4. T. Claryssea, P. Eybena, T. Hantschela, and W. Vandervorsta Materials Science in Semiconductor Processing 4 2001 61 66
5. W. Thomson (Lord Kelvin) Philosophical Magazine 46 1898 82
6. W.A. Zisman Review of Scientific Instruments 3 1932 367
7. M. Nonnenmacher, M.P. OBoyle, and H.K. Wickramasinghe Applied Physics Letters 58 1991 2921
8. Atsushi Kikukawa, Sumio Hosaka, and Ryo Imura Applied Physics Letters 66 25 1995 3510
9. C.-S. Jiang, D.J. Friedman, J.F. Geisz, H.R. Moutinho, M.J. Romero, and M.M. Al-Jassim Applied Physics Letters 83 2003 1572
10. P.A. Rosenthal, E.T. Yua, R.L. Pierson, and P.J. Zampardi Journal of Applied Physics 87 2000 1937
11. G. Leveque, P. Girard, E. Skouri, and D. Yarekha Applied Surface Science 157 2000 251 255
12. J.W.P. Hsu, H.M. Ng, A.M. Sergent, and S.N.G. Chu Applied Physics Letters 81 2002 3579
13. C. Frigeri, J.L. Weyher, and L. Zanotti Journal of the Electrochemical Society 136 1989 262
14. R. Lewandowska, J.L. Weyher, J.J. Kelly, L. Konczewicz, and B. Lucznik Journal of Crystal Growth 307 2007 298
15. J.L. Weyher, B. Łucznik, I. Grzegory, J. Smalc-Koziorowska, and T. Paskova Journal of Crystal Growth 312 2010 2611
16. B. Łucznik, T. Sochacki, M. Sarzyński, M. Kryśko, I. Dziecielewski, I. Grzegory, and S. Porowski Physica Status Solidi (c) 8 2011 2117
17. Tim Bohnen, Aryan E.F. de Jong, Willem J.P. van Enckevort, Jan L. Weyher, Gerbe W.G. Van Dreumel, Hina Ashraf, Paul R. Hageman, and Elias Vlieg Journal of Crystal Growth 311 2009 4685 4691
18. F. Karout, J.L. Weyher, G. Jacobs, G. Nowak, A. Presz, I. Grzegory, and L.M.F. Kaufmann Journal of Electronic Materials 28 12 1999 1448 1451
19. J.L. Weyher, F.D. Tichelaar, D.H. van Dorp, J.J. Kelly, and A. Khachapuridze Journal of Crystal Growth 312 2010 2607
20. D. Segev, and C.G. Van de Walle Journal of Crystal Growth 300 2007 199
21. S. Barbet, R. Aubry, M.-A. di Forte-Poisson, J.C. Jacquet, D. Deresmes, T. Mélin, and D. Théron Applied Physics Letters 93 2008 212107
22. S. Chevtchenko, X. Ni, Q. Fan, A.A. Baski, and H. Morkoç Applied Physics Letters 88 2006 122104
23. K. Kohler, J. Wiegert, H.P. Menner, M. Maier, and L. Kirste Journal of Applied Physics 103 2008 023706