Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Kim, Byung Jae ^a   Lee, Chongmin ^a   Jung, Younghun ^a   Hyeon Baik, Kwang ^b   Mastro, Michael A ^c   Hite, Jennifer K ^c   Eddy Jr , Charles R ^c   Kim, Jihyun ^a  

^a Korea University   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; CONTACT LAYERS; CURRENT SPREADING; CURRENT SPREADING EFFECT; HIGH-POWER OPERATION; INDIUM TIN OXIDE; OPTICAL IMAGE; TRANSPARENCY PROPERTIES; TRANSPARENT CONDUCTIVE; ULTRA-VIOLET;

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GALLIUM ALLOYS; GALLIUM NITRIDE; GEOMETRICAL OPTICS; GRAPHENE; GRAPHITE ELECTRODES; INDIUM COMPOUNDS; LIGHT; LIGHT EMISSION; TIN; TIN OXIDES;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 80053935159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3644496     Document Type: Article

References (18)

1. X. Liang, A. S. P. Chang, Y. Zhang, B. D. Harteneck, H. Choo, D. L. Olynick, and S. Cabrini, Nano Lett. 9, 467 (2009). 10.1021/nl803512z
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004). 10.1126/science.1102896 (Pubitemid 39440910)
3. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, Nat. Nanotechnol. 3, 654 (2008). 10.1038/nnano.2008.268
4. A. A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. N. Lau, Nano Lett. 8, 902 (2008). 10.1021/nl0731872
5. Y. Zhang, J. W. Tan, H. L. Stormer, and P. Kim, Nature 438, 201 (2005). 10.1038/nature04235 (Pubitemid 41599868)
6. X. Wang, L. Zhi, and K. Mullen, Nano Lett. 8, 323 (2007). 10.1021/nl072838r
7. Y. Wang, X. Chen, Y. Zhong, F. Zhu, and K. P. Loh, Appl. Phys. Lett. 95, 063302 (2009). 10.1063/1.3204698
8. S. I. Na, S. S. Kim, J. Jo, and D. Y. Kim, Adv. Mater. 20, 4061 (2008). 10.1002/adma.200800338
9. G. Jo, M. Choe, C. Y. Cho, J. H. Kim, W. Park, S. Lee, W. K. Hong, T. W. Kim, S. J. Park, B. H. Hong, Y. H. Kahng, and T. Lee, Nanotechnology 21, 175201 (2010). 10.1088/0957-4484/21/17/175201
10. C. M. Weber, D. M. Eisele, J. P. Rabe, Y. Liang, X. Feng, L. Zhi, K. Mllen, J. L. Lyon, R. Williams, D. A. V. Bout, and K. J. Stevenson, Small 6, 184 (2010). 10.1002/smll.200901448
11. B. J. Kim, M. A. Mastro, J. Hite, C. R. Eddy, Jr., and J. Kim, Opt. Express 18, 23030 (2010). 10.1364/OE.18.023030
12. D. Graf, F. Molitor, K. Ensslin, C. Stamfer, A. Jungen, C. Hierold, and L. Wirtz, Nano Lett. 7, 238 (2007). 10.1021/nl061702a (Pubitemid 46383577)
13. G. Gu, S. Nie, R. M. Feensta, R. P. Devaty, W. J. Choyke, W. K. Chan, and M. G. Kane, Appl. Phys. Lett. 90, 253507 (2007). 10.1063/1.2749839 (Pubitemid 47141249)
14. G. Eda, G. Fanchini, and M. Chhowalla, Nat. Nanotechnol. 3, 270 (2008). 10.1038/nnano.2008.83 (Pubitemid 351668055)
15. A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus, and J. Kong, Nano Lett. 9, 30 (2009). 10.1021/nl801827v
16. X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, Nano Lett. 9, 4359 (2009). 10.1021/nl902623y
17. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, and B. H. Hong, Nature 457, 706 (2009). 10.1038/nature07719
18. S. Kim, I. S. Park, H.-J. Kwon, W.-J. Chang, and S. W. Lee, Appl. Phys. Lett., 97, 173102 (2010). 10.1063/1.3504689