High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

Nano Letters

Volumn 15, Issue 12, 2015, Pages 7905-7912

  Torres, Carlos M ^a   Lan, Yann Wen ^a,b   Zeng, Caifu ^a   Chen, Jyun Hong ^c   Kou, Xufeng ^a   Navabi, Aryan ^a   Tang, Jianshi ^a   Montazeri, Mohammad ^a   Adleman, James R ^d   Lerner, Mitchell B ^d   Zhong, Yuan Liang ^c   Li, Lain Jong ^e   Chen, Chii Dong ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INSTITUTE OF PHYSICS   (Taiwan)

^c CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^d Naval Command   (United States)

^e KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

2D materials; high current gain; hot electron transport; MoS2; transition metal dichalcogenides

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GRAPHENE; HAFNIUM OXIDES; HETEROJUNCTIONS; HOT ELECTRONS; MOLYBDENUM COMPOUNDS; TRANSISTORS; TRANSITION METALS;

HIGH CURRENT GAIN; HOT ELECTRON TRANSISTORS; HOT-ELECTRON TRANSPORT; INTRINSIC VOLTAGE GAINS; NONCRYSTALLINE SEMICONDUCTORS; SEMICONDUCTOR HETEROSTRUCTURES; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL MATERIALS;

AMPLIFICATION;

EID: 84949682119     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b03768     Document Type: Article

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