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Volumn , Issue , 2014, Pages 33-38

Graphene base transistors with optimized emitter and dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF FREQUENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROELECTRONICS; NOISE FIGURE;

EID: 84906920615     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIPRO.2014.6859528     Document Type: Conference Paper
Times cited : (4)

References (23)
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  • 4
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    • Paussa, A.1    Geromel, M.2    Palestri, P.3    Bresciani, M.4    Esseni, D.5    Selmi, L.6
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    • Driussi, F.1    Palestri, P.2    Selmi, L.3
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    • M. Heiblum, "Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared", Solid State Electronics, vol. 14, pp. 343-366, 1981.
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    • S. B. Kumar, G. Seol and J. Guo, "Modeling of a vertical tunneling graphene heterojunction field-effect transistor", Applied Physics Letters, 101, 033503 (2012).
    • (2012) Applied Physics Letters , vol.101 , pp. 033503
    • Kumar, S.B.1    Seol, G.2    Guo, J.3
  • 17
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    • Cathode hot electrons and anode hot holes in tunneling mos capacitors
    • P. Palestri, L. Selmi, E. Sangiorgi and M. Pavesi, "Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors", Proceedings of ESSDERC, pp. 296-299, 2000.
    • (2000) Proceedings of ESSDERC , pp. 296-299
    • Palestri, P.1    Selmi, L.2    Sangiorgi, E.3    Pavesi, M.4
  • 18
    • 0033190239 scopus 로고    scopus 로고
    • Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin sio2 and sio2/ta2o5 dielectrics with oxide scaling
    • A. Shanware, H. Z. Massoud, E. Vogel, K. Henson, J. R. Hauser and J. J. Wortman, "Modeling the Trends in Valence-Band Electron Tunneling in NMOSFETs with Ultrathin SiO2 and SiO2/Ta2O5 Dielectrics with Oxide Scaling", Microelectronic Engineering, vol. 48, pp. 295-298, 1999.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.