Direct measurement of dirac point energy at the graphene/oxide interface

Nano Letters

Volumn 13, Issue 1, 2013, Pages 131-136

  Xu, Kun ^a,b   Zeng, Caifu ^c   Zhang, Qin ^a,d   Yan, Rusen ^a,d   Ye, Peide ^b   Wang, Kang ^c   Seabaugh, Alan C ^d   Xing, Huili Grace ^d   Suehle, John S ^a   Richter, Curt A ^a   Gundlach, David J ^a   Nguyen, N V ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b PURDUE UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

band alignment; Graphene; graphene insulator semiconductor; internal photoemission; work function

Indexed keywords

BAND ALIGNMENTS; CONDUCTION BAND EDGE; DENSITY-OF-STATES; DIRAC POINT; DIRECT MEASUREMENT; ELECTRONIC BAND; FLAT BAND; GRAPHENE LAYERS; GRAPHENE-INSULATOR-SEMICONDUCTOR; INTERNAL PHOTOEMISSION; MATERIAL SYSTEMS; MEASUREMENT TECHNIQUES; PHOTOEMISSION YIELDS; SIGNIFICANT IMPACTS; TEST STRUCTURE;

ALIGNMENT; CONDUCTION BANDS; FERMI LEVEL; PHOTOEMISSION; SILICON; WORK FUNCTION;

GRAPHENE;

EID: 84872112853     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303669w     Document Type: Article

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