-
1
-
-
84856241232
-
Ultimate RF performance potential of carbon electronics
-
Oct.
-
S. O. Koswatta, A. Valdes-Garcia, M. B. Steiner, Y.-M. Lin, and P. Avouris, "Ultimate RF performance potential of carbon electronics," IEEE Trans. Microw. Theory Techn., vol. 59, no. 10, pp. 2739-2750, Oct. 2011.
-
(2011)
IEEE Trans. Microw. Theory Techn.
, vol.59
, Issue.10
, pp. 2739-3275
-
-
Koswatta, S.O.1
Valdes-Garcia, A.2
Steiner, M.B.3
Lin, Y.-M.4
Avouris, P.5
-
2
-
-
84857001655
-
Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms
-
Dec.
-
A. Paussa, M. Geromel, P. Palestri, M. Bresciani, D. Esseni, and L. Selmi, "Simulation of graphene nanoscale RF transistors including scattering and generation/recombination mechanisms," in IEEE IEDM Tech. Dig., Dec. 2011, pp. 11.7.1-11.7.4.
-
(2011)
IEEE IEDM Tech. Dig.
, pp. 1171-1174
-
-
Paussa, A.1
Geromel, M.2
Palestri, P.3
Bresciani, M.4
Esseni, D.5
Selmi, L.6
-
3
-
-
84879110657
-
A graphene-based hot electron transistor
-
S. Vaziri et al., "A graphene-based hot electron transistor," Nano Lett., vol. 13, no. 4, pp. 2370-2375, 2013.
-
(2013)
Nano Lett.
, vol.13
, Issue.4
, pp. 2370-2375
-
-
Vaziri, S.1
-
4
-
-
84860383292
-
Vertical graphene base transistor
-
May
-
W. Mehr et al., "Vertical graphene base transistor," IEEE Electron Device Lett., vol. 33, no. 5, pp. 691-693, May 2012.
-
(2012)
IEEE Electron Device Lett.
, vol.33
, Issue.5
, pp. 691-693
-
-
Mehr, W.1
-
5
-
-
84879110657
-
Vertical graphene-base hot-electron transistor
-
C. Zeng et al., "Vertical graphene-base hot-electron transistor," Nano Lett., vol. 13, no. 4, pp. 1435-1439, 2013.
-
(2013)
Nano Lett.
, vol.13
, Issue.4
, pp. 1435-1439
-
-
Zeng, C.1
-
6
-
-
84876950858
-
Modeling, simulation and design of the vertical graphene base transistor
-
Sep.
-
F. Driussi, P. Palestri, and L. Selmi, "Modeling, simulation and design of the vertical graphene base transistor," Microelectron. Eng., vol. 109, pp. 338-341, Sep. 2013.
-
(2013)
Microelectron. Eng.
, vol.109
, pp. 338-341
-
-
Driussi, F.1
Palestri, P.2
Selmi, L.3
-
7
-
-
84889636207
-
DC and small-signal numerical simulation of graphenebase transistor for terahertz operation
-
V. Di Lecce, R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "DC and small-signal numerical simulation of graphenebase transistor for terahertz operation," in Proc. ESSDERC, 2013, p. 314.
-
(2013)
Proc. ESSDERC
, pp. 314
-
-
Di Lecce, V.1
Grassi, R.2
Gnudi, A.3
Gnani, E.4
Reggiani, S.5
Baccarani, G.6
-
8
-
-
0019552631
-
Tunneling hot electron transfer amplifiers (THETA): Amplifiers operating up to the infrared
-
M. Heiblum, "Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared," Solid-State Electron., vol. 24, no. 4, pp. 343-366, 1981. (Pubitemid 11413051)
-
(1981)
Solid-State Electronics
, vol.24
, Issue.4
, pp. 343-366
-
-
Heiblum Mordehai1
-
9
-
-
84857567921
-
Field-effect tunneling transistor based on vertical graphene heterostructures
-
L. Britnell et al., "Field-effect tunneling transistor based on vertical graphene heterostructures," Science, vol. 335, no. 6071, pp. 947-950, 2012.
-
(2012)
Science
, vol.335
, Issue.6071
, pp. 947-950
-
-
Britnell, L.1
-
10
-
-
84864264962
-
Modeling of a vertical tunneling graphene heterojunction field-effect transistor
-
S. B. Kumar, G. Seol, and J. Guo, "Modeling of a vertical tunneling graphene heterojunction field-effect transistor," Appl. Phys. Lett., vol. 101, no. 3, p. 033503, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.101
, Issue.3
, pp. 33503
-
-
Kumar, S.B.1
Seol, G.2
Guo, J.3
-
11
-
-
0020206154
-
1/2( eta ) used to describe electron density in a semiconductor
-
J. S. Blakemore, "Approximations for Fermi-Dirac integrals, especially the function F1/2(?) used to describe electron density in a semiconductor," Solid-State Electron., vol. 25, no. 11, pp. 1067-1076, 1982. (Pubitemid 13460341)
-
(1982)
Solid-State Electronics
, vol.25
, Issue.11
, pp. 1067-1076
-
-
Blakemore, J.S.1
-
14
-
-
0033080327
-
A new I-V model for stressinduced leakage current including inelastic tunneling
-
Feb.
-
S. Takagi, N. Yasuda, and A. Toriumi, "A new I-V model for stressinduced leakage current including inelastic tunneling," IEEE Trans. Electron Devices, vol. 46, no. 2, pp. 348-354, Feb. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, Issue.2
, pp. 348-354
-
-
Takagi, S.1
Yasuda, N.2
Toriumi, A.3
-
15
-
-
0026897881
-
Quantum-mechanical modeling of accumulation layers in MOS structure
-
Jul.
-
J. Suñé, P. Olivo, and B. Riccó, "Quantum- mechanical modeling of accumulation layers in MOS structure," IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1732-1739, Jul. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, Issue.7
, pp. 1732-1739
-
-
Suñé, J.1
Olivo, P.2
Riccó, B.3
-
16
-
-
0038394526
-
Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1?x gate stacks
-
Feb.
-
Y. T. Hou, M.-F. Li, H. Y. Yu, and D. L. Kwong, "Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1?x gate stacks," IEEE Electron Device Lett., vol. 24, no. 2, pp. 96-98, Feb. 2003.
-
(2003)
IEEE Electron Device Lett.
, vol.24
, Issue.2
, pp. 96-98
-
-
Hou, Y.T.1
Li, M.-F.2
Yu, H.Y.3
Kwong, D.L.4
-
17
-
-
78649968139
-
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories
-
S. Spiga et al., "Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories," in Proc. ESSDERC, 2010, pp. 408-411.
-
(2010)
Proc. ESSDERC
, pp. 408-411
-
-
Spiga, S.1
-
19
-
-
84907818517
-
Cathode hot electrons and anode hot holes in tunneling MOS capacitors
-
P. Palestri, L. Selmi, E. Sangiorgi, and M. Pavesi, "Cathode hot electrons and anode hot holes in tunneling MOS capacitors," in Proc. ESSDERC, 2000, pp. 296-299.
-
(2000)
Proc. ESSDERC
, pp. 296-299
-
-
Palestri, P.1
Selmi, L.2
Sangiorgi, E.3
Pavesi, M.4
-
20
-
-
0023292471
-
Charge-control analysis of the collectorbase space-charge-region contribution to bipolar-transistor time constant ?T
-
Feb.
-
R. G. Meyer and R. S. Muller, "Charge-control analysis of the collectorbase space-charge-region contribution to bipolar-transistor time constant ?T ," IEEE Trans. Electron Devices, vol. 34, no. 2, pp. 450-452, Feb. 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.34
, Issue.2
, pp. 450-452
-
-
Meyer, R.G.1
Muller, R.S.2
-
21
-
-
79951833140
-
SiGe HBT technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay
-
Dec.
-
B. Heinemann et al., "SiGe HBT technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay," in IEEE IEDM Tech. Dig., Dec. 2010, pp. 688-691.
-
(2010)
IEEE IEDM Tech. Dig.
, pp. 688-691
-
-
Heinemann, B.1
-
23
-
-
25844479330
-
Dielectric breakdown mechanisms in gate oxides
-
S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and C. H. Tung, "Dielectric breakdown mechanisms in gate oxides," J. Appl. Phys., vol. 98, no. 12, p. 121301, 2005.
-
(2005)
J. Appl. Phys.
, vol.98
, Issue.12
, pp. 121301
-
-
Lombardo, S.1
Stathis, J.H.2
Linder, B.P.3
Pey, K.L.4
Palumbo, F.5
Tung, C.H.6
-
24
-
-
84858164712
-
Electron tunneling through ultrathin boron nitride crystalline barriers
-
L. Britnell et al., "Electron tunneling through ultrathin boron nitride crystalline barriers," Nano Lett., vol. 12, no. 3, pp. 1707-1710, 2012.
-
(2012)
Nano Lett.
, vol.12
, Issue.3
, pp. 1707-1710
-
-
Britnell, L.1
-
25
-
-
84859798281
-
Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics
-
J. Lee, L. Tao, Y. Hao, R. S. Ruoff, and D. Akinwande, "Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics," Appl. Phys. Lett., vol. 100, no. 15, p. 152104, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.15
, pp. 152104
-
-
Lee, J.1
Tao, L.2
Hao, Y.3
Ruoff, R.S.4
Akinwande, D.5
-
26
-
-
79960926454
-
Impact of graphene interface quality on contact resistance and RF device performance
-
Aug.
-
A. Hsu, H. Wang, K. K. Kim, J. Kong, and T. Palacios, "Impact of graphene interface quality on contact resistance and RF device performance," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1008-1010, Aug. 2011.
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.8
, pp. 1008-1010
-
-
Hsu, A.1
Wang, H.2
Kim, K.K.3
Kong, J.4
Palacios, T.5
|