Two dimensional crystal tunneling devices for THz operation

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Kong, B D ^a   Zeng, C ^b   Gaskill, D K ^c   Wang, K L ^b   Kim, K W ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC ELECTRODES; ATOMIC SCALE; FIRST PRINCIPLES METHOD; FREQUENCY RANGES; HOT ELECTRON TRANSISTORS; LAYERED CRYSTALS; NUMERICAL CALCULATION; STRONG NONLINEARITY; THZ DEVICES; TUNNELING BARRIER; TUNNELING DEVICE; TWO-DIMENSIONAL CRYSTALS; ZERO-BIAS;

CALCULATIONS; GRAPHENE; MONOLAYERS;

TWO DIMENSIONAL;

EID: 84871729536     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773514     Document Type: Article

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