Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

Journal of Applied Physics

Volumn 118, Issue 20, 2015, Pages

  Reichel, Christian ^a,b   Feldmann, Frank ^a   Müller, Ralph ^a   Reedy, Robert C ^b   Lee, Benjamin G ^b   Young, David L ^b   Stradins, Paul ^b   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ION IMPLANTATION; IONS; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON COMPOUNDS;

AMORPHOUS SILICON (A-SI); FABRICATION PROCESS; HIGH EFFICIENCY SILICON SOLAR CELLS; HIGH-TEMPERATURE ANNEAL; IMPLANTATION DOSE; INTERDIGITATED BACK CONTACTS; LOW ENERGY ION IMPLANTATION; SCHOTTKY CONTACTS;

SILICON SOLAR CELLS;

EID: 84948457756     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4936223     Document Type: Article

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