Effects of fluorine in silicon solar cells with polysilicon contacts

Solar Energy Materials and Solar Cells

Volumn 53, Issue 1-2, 1998, Pages 115-129

  Castaner L ^a   Silvestre, S ^a   Carter, J ^a   Parton, D ^a   Ashburn, P ^a  

^a NONE

Author keywords

Fluorine; Polysilicon; Silicon solar cells

Indexed keywords

BACK INTERFACE RECOMBINATION VELOCITY; OPEN CIRCUIT VOLTAGE; POLYSILICON;

COMPOSITION EFFECTS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE MEASUREMENT; FLUORINE; INTERFACES (MATERIALS); ION IMPLANTATION; OXIDATION; PASSIVATION; SHORT CIRCUIT CURRENTS;

SILICON SOLAR CELLS;

EID: 0032069908     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0248(98)00017-8     Document Type: Article

References (14)

1. F.A. Lindholm, A. Negroschel, M. Arienzo, P.A. Iles, Heavily doped polysilicon-contact solar cells, IEEE Electron Dev. Lett., EDL-6 (7) (1985) 363-365.
2. N.G. Tarr, A Polysilicon emitter solar cell, IEEE Electron Dev. Lett. EDL-6, (12), (1985), 655-658.
3. N.G. Tarr, R.E. Thomas, S.K. Wong, Rapid thermal annealing of polysilicon emitter solar cells, Proc. 11th PVSEC, Montreux, October 1992, pp. 434-436.
4. L. Castañer, J. Alonso, S. Silvestre, P. Ashburn, A. Luque Polysilicon emitter technology for silicon solar cells, Contract Joule II-CT92-0023, Final Report, February 1995.
5. N. E. Moiseiwitsch, P. Ashburn, The benefits of fluorine implant in pnp polysilicon emitter bipolar transistors, IEEE Trans. Electron devices, 41 (7) (1994) 1249-1255.
6. M.Y. Ghannam, S. Sivoththaman, J. Nijs, M. Rodot R. Mertens Tailoring the degradation of the quantum efficiency of multicrystalline silicon solar cells caused by non optimised heavy phosphorus difffusion Proc. 23rd IEEE Photovoltaic Specialists Conf., Louisville, 1993, pp. 122-126.
7. M.A. Green A. Wang, J. Zhao, G.F. Zheng, W. Zhang, Z. Shi, C.B. Honsberg, S.R. Wenham. 23.5% efficiency and other recent improvements in silicon solar cells and module performance, Proc. 12th European Photovoltaic Solar Energy Conference. Amsterdam, 1994, pp. 776-779.
8. S.L. Wu, C.L. Lee, T.F. Lei, C.F. Chen, K.Z. Ho, Y.C. Ling, Enhancement of oxide break-up by implantation of fluorine in Poly-Si emitter contacted shallow junction formation, IEEE Trans. Electron. Dev. Lett. 15 (4) (1994) 120-122.
9. Shye-Lin Wu, Chung-Len Lee, Tan Fu Lei, Hue-Chen Chang, Characteristics of polysilicon contacted shallow junction diode formed with a stacked-amorphous-silicon film, IEEE Trans. Electron Dev. 40 (10) (1993) 1797-1803.
10. A.G. Aberle, S.R. Wenham, M.A. Green, A new method for accurate measurements of the lumped series resistance of solar cells, Proc. 23rd IEEE PVSC, 1993, pp. 133-139.
11. 2 system, Soli-State Electron. 34 (8) (1991) 889-892.
12. B. Jalali, E.S. Yang, A thermionic diffusion model of polysilicon emitters Solid State Electronics, 32 (1989) 323-327.
13. L. Castañer, J. Carter, S. Silvestre, P. Ashburn, R. Alcubilla, A. Luque, J. Alonso, J. Pons, T. Markvart, Series resistance in polysilicon contacted solar cells, Proc. First World Conference on Photovoltaic Energy Conversion. IEEE, UE, PVSEC, Hawaii, December 1994, 1489-1491.
14. S. Silvestre, D. Parton, L. Castañer, J. Carter, P. Ashburn, Series resistance in double-polysilicon-contacted solar cells, Proc. 25th IEEE PVSC, May 1996, pp. 497-500.