Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Pysch, Damian ^a   Meinhard, Christoph ^a   Harder, Nils Peter ^b   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AFORS-HET; AMORPHOUS LAYER; AMORPHOUS SILICON LAYERS; BACK SURFACE FIELDS; DECAY LIFE-TIME; DEFECT CONCENTRATIONS; DOPING CONCENTRATION; EMITTER LAYERS; EXTERNAL VOLTAGES; INTERFACE PASSIVATION; INTERNAL VOLTAGE; OPTIMIZATION APPROACH; OPTIMUM DOPING; PHOTOCONDUCTANCE; SATURATION VALUES; SILICON HETEROJUNCTIONS; TRADE OFF;

CONCENTRATION (PROCESS); HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; POWER QUALITY;

AMORPHOUS SILICON;

EID: 81355136089     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3650255     Document Type: Article

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