Interdigitated Back Passivated Contact (IBPC) solar cells formed by ion implantation

IEEE Journal of Photovoltaics

Volumn 6, Issue 1, 2016, Pages 41-47

  Young, David L ^a   Nemeth, William ^a   Lasalvia, Vincenzo ^a   Reedy, Robert ^a   Essig, Stephanie ^a   Bateman, Nicholas ^b   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Ion implantation; passivated contacts; silicon solar cells

Indexed keywords

AMORPHOUS SILICON; IONS; PASSIVATION; SILICON; SILICON OXIDES; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR CELLS;

AMORPHOUS SILICON (A-SI); CELL STRUCTURE; CONTACT RESISTIVITIES; N-TYPE CONTACTS; P-TYPE CONTACT; RECOMBINATION PARAMETERS; TEST STRUCTURE; THERMAL-ANNEALING;

ION IMPLANTATION;

EID: 84944587528     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2483364     Document Type: Article

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