Phosphorus-diffused polysilicon contacts for solar cells

Solar Energy Materials and Solar Cells

Volumn 142, Issue , 2015, Pages 75-82

  Yan, Di ^a   Cuevas, Andres ^a   Bullock, James ^a   Wan, Yimao ^a   Samundsett, Christian ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Passivated contact; Polysilicon; Solar cell

Indexed keywords

DIFFUSION; PHOSPHORUS; POLYSILICON; SEMICONDUCTING SILICON; SILICON OXIDES; SOLAR CELLS;

BORON DIFFUSIONS; BULK RESISTIVITY; CONTACT RESISTIVITIES; DIFFUSION PROCESS; OXIDE THICKNESS; PHOSPHORUS DIFFUSION; POLYSILICON LAYERS; RECOMBINATION CURRENTS;

SILICON SOLAR CELLS;

EID: 84940604880     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.06.001     Document Type: Article

References (29)

1. A. Cuevas Electrons and holes in solar cells with partial rear contacts Prog. Photovolt.: Res. Appl. 22 2014 764 774
2. W.G.J.H.M. van Sark, L. Korte, and F. Roca Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells 2012 Springer Berlin, Heidelberg
3. T.H. Ning, R.D. Isaac, Effect of emitter contact on current gain of silicon bipolar devices, 1979 International Electron Devices Meeting, 1979, pp. 473-476.
4. G.L. Patton, J.C. Bravman, and J.D. Plummer Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors IEEE Trans. Electron Device 33 1986 1754 1768
5. I.R.C. Post, P. Ashburn, and G.R. Wolstenholme Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment IEEE Trans. Electron Device 39 1992 1717 1731
6. A.A. Eltoukhy, and D.J. Roulston The role of the interfacial layer in polysilicon emitter bipolar transistors IEEE Trans. Electron Device 29 1982 1862 1869
7. H.C. de Graaff, and J.G. de Groot The SIS tunnel emitter: a theory for emitters with thin interface layers IEEE Trans. Electron Device 26 1979 1771 1776
8. P.A. Potyraj, D.L. Chen, M.K. Hatalis, and D.W. Greve Interfacial oxide, grain size, and hydrogen passivation effects on polysilicon emitter transistors IEEE Trans. Electron Device 35 1988 1334 1343
9. A. Neugroschel, M. Arienzo, Y. Komem, and R.D. Isaac Experimental study of the minority-carrier transport at the polysilicon - monosilicon interface IEEE Trans. Electron Device 32 1985 807 816
10. B. Jalali, and E.S. Yang A general model for minority carrier transport in polysilicon emitters Solid-State Electron. 32 1989 323 327
11. A. Srivastava Current transport mechanism of polysilicon-emitter transistor Microelectron. Reliab. 31 1991 27 31
12. C.C. Ng, E.S. Yang, A thermionic-diffusion model of polysilicon emitter, 1986 International Electron Devices Meeting, 1986, pp. 32-35.
13. + poly-crystalline Si/mono-crystalline Si junctions Sol. Energy Mater. Sol. Cells 131 2014 85 91
14. J.L. Egley, and J.L. Gray Demonstration of the importance of the oxide breakup in polysilicon-contacted-emitter modeling IEEE Trans. Electron Device 38 1991 2112 2117
15. G.R. Wolstenholme, N. Jorgensen, P. Ashburn, and G.R. Booker An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations J. Appl. Phys. 61 1987 225 233
16. R. Peibst, Ro x, U. mer, K.R. Hofmann, B. Lim, and et al. A simple model describing the symmetric I-V characteristics of p polycrystalline Si/n monocrystalline Si, and n polycrystalline Si/p monocrystalline Si junctions IEEE J. Photovolt. 4 2014 841 850
17. F. Feldmann, M. Bivour, C. Reichel, M. Hermle, and S.W. Glunz Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics Sol. Energy Mater. Sol. Cells 120 Part A 2014 270 274
18. F. Feldmann, R. Müller, C. Reichel, and M. Hermle Ion implantation into amorphous Si layers to form carrier-selective contacts for Si solar cells phys. status solidi (RRL) - Rapid Res. Lett. 08 2014 767 770
19. U. Romer, R. Peibst, T. Ohrdes, B. Lim, J. Krugener, T. Wietler, and et al. Ion Implantation for poly-Si passivated back-junction back-contacted solar cells IEEE J. Photovolt. 5 2015 1 8
20. R. Peibst, U. Romer, Y. Larionova, H. Schulte-Huxel, T. Ohrdes, M. Haberle, et al., Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions, in: Proceedings of the 40th 2014 IEEE Photovoltaic Specialist Conference (PVSC), 2014.
21. R.H. Cox, and H. Strack Ohmic contacts for GaAs devices Solid-State Electron. 10 1967 1213 1218
22. H. Kobayashi Asuha, O. Maida, M. Takahashi, and H. Iwasa Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density J. Appl. Phys. 94 2003 7328 7335
23. D.M. Kim, A.N. Khondker, R.R. Shah, and D.L. Crosthwait Conduction in polycrystalline silicon: Diffusion theory and extended state mobility model IEEE Electron Device Lett. 3 1982 141 143
24. N.C.C. Lu, L. Gerzberg, L. Chih-Yuan, and J.D. Meindl Modeling and optimization of monolithic polycrystalline silicon resistors IEEE Trans. Electron Device 28 1981 818 830
25. C.Y. Wong, C.R.M. Grovenor, P.E. Batson, and D.A. Smith Effect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline silicon J. Appl. Phys. 57 1985 438 442
26. C.Y. Wong, A.E. Michel, R.D. Isaac, R.H. Kastl, and S.R. Mader The poly-single crystalline silicon interface J. Appl. Phys. 55 1984 1131 1134
27. C.R.M. Grovenor Grain boundaries in semiconductors J. Phys. C: Solid State Phys. 18 1985 4079
28. D.K. Schroder, and D.L. Meier Solar cell contact resistance - A review IEEE Trans. Electron Device 31 1984 637 647
29. J.Y. Gan, R.M. Swanson, Polysilicon emitters for silicon concentrator solar cells, in: Proceedings of Conference Record of the Twenty First IEEE Photovoltaic Specialists Conference, 1990., vol. 1, 1990, pp. 245-250.