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Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1284-1286

Analysis of the improved contact resistance in metal-p+ silicon Schottky barriers using the BF2/B mixed implantation

(4) Lee, Jung Ho a Yeo, In Seok a Lee, Jeong Youb a Lee, Sahng Kyoo a

a Hynix Semiconductor Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

CONTACT RESISTANCE; MIXED IMPLANTATION; SPREADING RESISTANCE PROFILING (SRP) MEASUREMENT;

SCHOTTKY BARRIER DIODES;

EID: 0032613907 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124669 Document Type: Article

Times cited : (5)

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