Doping characteristics of BF 2 + implants in <100> and <111> silicon

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1661-1666

  Drobny, Vladimir F ^a,b   Rubalcava, Jade ^c  

^a IEEE   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c MAXIM INTEGRATED PRODUCTS   (United States)

Author keywords

Annealing; Boron compounds; Fluorine diffusion processes; Ion implantation; Resistance; Silicon

Indexed keywords

ELECTRICAL ACTIVATION; FLUORINE DIFFUSION PROCESSES; SHEET RESISTANCE;

AMORPHIZATION; ANNEALING; BORON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; FLUORINE; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

SEMICONDUCTING SILICON;

EID: 0035424983     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936586     Document Type: Article

References (24)

1. A systematic analysis of defects in ion-implanted silicon
2. Regrowth of amorphous films
3. + implanted silicon
4. +
5. +-implanted silicon
6. 2 implanted silicon
7. + implanted silicon
8. 2 ion implanted silicon
9. 2-implanted silicon
10. Silicon processing for the VLSI era
11. 11B ions
12. + implanted (111) Si
13. High-concentration boron diffusion in silicon: Simulation of the precipitation phenomena
14. Role of point defects in the transient diffusion and clustering of implanted boron in silicon
15. A new clustering model for runaway boron pile-up effect
16. Anomalous diffusion of fluorine in silicon
17. The effects of fluorine atoms in high-dose arsenic or phosphorus ion implanted silicon
18. Role of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
19. 16O reaction and secondary-ion mass spectrometry
20. Bonding of fluorine-implanted and annealed silicon