Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Applied Physics Letters

Volumn 101, Issue 17, 2012, Pages

  Demaurex, Bénédicte ^a   De Wolf, Stefaan ^a   Descoeudres, Antoine ^a   Charles Holman, Zachary ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBANCE SPECTRUM; AMORPHOUS SILICON FILM; AS-DEPOSITED FILMS; ELECTRONIC INTERFACE; FABRICATION PROCESS; INDIUM TIN OXIDE; LOW TEMPERATURE ANNEALING; SILICON HETEROJUNCTIONS; SILICON INTERFACE; TRANSPARENT CONDUCTIVE OXIDES;

HETEROJUNCTIONS; HYDROGEN; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; TIN; TIN OXIDES;

HYDROGENATION;

EID: 84868031186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764529     Document Type: Article

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