Ion implantation for poly-Si passivated back-junction back-contacted solar cells

IEEE Journal of Photovoltaics

Volumn 5, Issue 2, 2015, Pages 507-514

  Römer, Udo ^a   Peibst, Robby ^a   Ohrdes, Tobias ^a   Lim, Bianca ^a   Krügener, Jan ^b   Wietler, Tobias ^b   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Back contact solar cells; carrier selective contacts; ion implantation; photovoltaic cells; solar energy

Indexed keywords

IONS; PASSIVATION; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; SILICON; SILICON WAFERS; SOLAR CELLS; SOLAR ENERGY; SOLAR POWER GENERATION;

BACK CONTACT; BACK SURFACE FIELDS; IDEALITY FACTORS; RECOMBINATION MECHANISMS; SATURATION CURRENT DENSITIES; SELECTIVE CONTACTS; SPACE CHARGE REGIONS; UN-DOPED REGIONS;

ION IMPLANTATION;

EID: 85027934898     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2014.2382975     Document Type: Article

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