Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Volumn , Issue , 2014, Pages 852-856

  Peibst, Robby ^a   Romer, Udo ^a   Larionova, Yevgeniya ^a   Schulte Huxel, Henning ^a   Ohrdes, Tobias ^a   Haberle, Michael ^a   Lim, Bianca ^a   Krugener, Jan ^b   Stichtenoth, Daniel ^c   Wutherich, Tobias ^c   Schollhorn, Claus ^c   Graff, John ^d   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c Bosch Solar Energy   (Germany)

^d VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

back contact solar cells; Ion implantation; module level interconnection; Photovoltaic cell; Silicon; Solar energy

Indexed keywords

INTEGRATED CIRCUIT INTERCONNECTS; IONS; METALLIZING; PASSIVATION; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; POLYCRYSTALLINE MATERIALS; SILICON; SOLAR ENERGY; SOLAR POWER GENERATION;

ABSORPTION LOSS; BACK CONTACT; BUILDING BLOCKES; ENABLING TECHNOLOGIES; HIGH-EFFICIENCY; ION IMPLANTED; LEAN PROCESS; MODULE-LEVEL INTERCONNECTION;

ION IMPLANTATION;

EID: 84912078142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2014.6925049     Document Type: Conference Paper

References (31)

1. International Technology Roadmap for Photovoltaic (ITRPV), 2013 edition, www.itrpv.net
2. M. D. Lammert and R. J. Schwartz, The interdigitated Back contact solar cell: A silicon solar cell for use in Concentrated sunlight, IEEE Trans. Electron Dev. 24 pp. 337-342, (1977).
3. N. Mingirulli, J. Haschke, R. Gogolin, R. Ferré, T. F. Schulze, J. Düsterhöft;, N.-P. Harder; L. Korte, R. Brendel; B. Rech, Efficient interdigitated back-contacted silicon heterojunction solar cells, Physica Status Solidi / Rapid Research Letters 5 pp. 159-161 (2011) doi:10.1002/pssr.201105056
4. K. Ji, H. Syn, J. Choi, H.M. Lee, and D. Kim, The Emitter Having Microcrystalline Surface in Silicon Heterojunction Interdigitated Back Contact Solar Cells, Jap. J. Appl. Phys. 51 10NA05 (2012).
5. rd PVSEC, (2013).
6. Panasonic press release, 10.04.2014, www.pv-tech.org
7. st IEEE-PVSC pp. 245-250, (1990).
8. F. Feldmann, M. Bivour, C. Reichel, M. Hermle and S. W. Glunz, Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics, Solar Energy Materials and Solar Cells, 01/2013; DOI:10.1016/j.solmat.2013.09.017, (2013).
9. U. Römer, R. Peibst, B. Lim, J. Krügener, E. Bugiel, T. Wietler and R. Brendel, Recombination Behavior and Contact Resistance of n+ and p+ Poly-Crystalline Si / Mono-Crystalline Si Junction, submitted to Solar Energy Materials and Solar Cells (2014).
10. R. Brendel, T. Dullweber, R. Gogolin, H. Hannebauer, N.-P. Harder, J. Hensen, S. Kajari-Schroeder, R. Peibst, J. H. Petermann, U. Römer, J. Schmidt, H. Schulte-Huxel, and V. Steckenreiter, Recent progress and options for future crystalline silicon solar cells, Proc. of the 28th EU-PVSEC, pp. 676-690 (2013).
11. th EUPVSEC, (2012).
12. th EUPVSEC, (2012).
13. th EU PVSEC, pp. 866-869 (2012).
14. J. Robbelein, B. Vermang, T. Janssens, M. Alemán, N.E. Posthuma and J. Poortmans, Passivation layers for large area interdigitated back junction cells and their electrical isolation properties, Proc. of the 26th EU-PVSEC, pp. 1008-1013, (2011).
15. C. Reichel, F. Granek, M. Hermle, S.W. Glunz, Back-contacted back-junction n - type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry, Prog. Photovolt: Res. Appl. 21(5), 1063 (2013).
16. R. Keding, D. Stüwe, C. Reichel, F. Clement, R. Woehl, R. Bock, A. Bochow, K. Katkhouda, T. Geppert and H. Reinicke, presented at the 28th. EUPVSEC, (2013).
17. th IEEE PVSC, p. 532 (1988).
18. H. Schulte-Huxel, R. Bock, S. Blankemeyer, A. Merkle, R. Brendel, Aluminum-Based Mechanical and Electrical Laser Interconnection Process for Module Integration of Silicon Solar Cells, IEEE J. Photovoltaics 2(1), 16 (2012).
19. H. Schulte-Huxel, S. Blankemeyer, U. Römer, A. Merkle, Y. Larionova, V. Steckenreiter, R. Peibst, S. Kajari-Schroeder, and R. Brendel, Simplified two-level metallization and module interconnection for point-contact solar cells, submitted to Energy Procedia (2014)
20. R. Swanson, S. Beckwith, R. Crane, W. Eades, Young Hoon Kwark, R. Sinton, S. Swirhun, Point-contact silicon solar cells, IEEE Trans. Electron Dev. 31(5), p. 661 (1984).
21. R. Peibst, U. Römer, K.R. Hofmann, B. Lim, J. Krügener, T. Wietler, and R. Brendel, A simple model describing the symmetric IV - characteristics of p poly-crystalline Si / n mono-crystalline Si and n poly-crystalline Si / p mono-crystalline Si junctions, IEEE J. Photovoltaics 4 (3), pp. 841-850, (2014).
22. Patent Method for the contact separation of electrically-conducting layers on the back contacts of solar cells and corresponding solar cells, publication number WO/2006/042698 (2006).
23. Bosch press release, 15.08.2013, www.solarserver.de
24. th IEEE PVSC, pp. 1280-1284, (2013).
25. th IEEE PVSC, pp. 578-583 (1985).
26. th EU-PVSEC., p. 1339 (1994).
27. F. J. Wilkinson, A. J. D. Farmer, and J. Geist, The near ultraviolet quantum yield of silicon. J. Appl. Phys. 54, p. 1172 (1983).
28. S. Kolodinski, J. H. Werner, T. Wittchen, and H. J. Queisser, Quantum efficiencies exceeding unity due to impact ionization in silicon solar cells, Appl. Phys. Lett. 63, 2405 (1993).
29. A. J. Harris, R. S. Walker, and R. Sneddon, Current voltage characteristics of amorphous silicon PN junctions, J. of Appl. Phys. 51, 4287 (1980).
30. Patent Application Use of ion beam tails to manufacture a work piece, US 2013/0008494 A1 (2013).
31. M. Kessler, T. Ohrdes, P. P. Altermatt, and R. Brendel, The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon, J. Appl. Phys. 111, p. 054508 (2012).