Quantum Hall resistance standard in graphene devices under relaxed experimental conditions

Nature Nanotechnology

Volumn 10, Issue 11, 2015, Pages 965-971

  Ribeiro Palau, R ^a   Lafont, F ^a   Brun Picard, J ^a   Kazazis, D ^b   Michon, A ^b   Cheynis, F ^c   Couturaud, O ^d   Consejo, C ^d   Jouault, B ^d   Poirier, W ^a   Schopfer, F ^a  

^a LABORATOIRE NATIONAL DE MÉTROLOGIE ET D ESSAIS LNE   (France)

^b CNRS   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

^d UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE MEASUREMENT; ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; GRAPHENE; GRAPHENE DEVICES; HALL EFFECT DEVICES; III-V SEMICONDUCTORS; MOLECULAR PHYSICS; QUANTUM THEORY; SEMICONDUCTING GALLIUM; SILICON CARBIDE;

CHEMICAL VAPOUR DEPOSITION; ELECTRICAL RESISTANCES; EXPERIMENTAL CONDITIONS; FUNDAMENTAL CONSTANTS; NATIONAL METROLOGY INSTITUTES; QUANTIZED HALL RESISTANCE; QUANTUM HALL RESISTANCE; STATE OF THE ART;

QUANTUM HALL EFFECT;

GRAPHENE; SILICON CARBIDE;

ARTICLE; CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRICAL EQUIPMENT; ELECTRICITY; ELECTROMAGNETIC FIELD; NANOTECHNOLOGY; PRIORITY JOURNAL; QUANTUM HALL RESISTANCE STANDARD GRAPHENE BASED DEVICE; QUANTUM MECHANICS; REPRODUCIBILITY; ROOM TEMPERATURE; SEMICONDUCTOR; TEMPERATURE;

EID: 84947027710     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.192     Document Type: Article

References (43)

1. Klitzing, K., Dorda, G., & Pepper, M. New method for high-Accuracy determination of the fine-structure constant based on quantized Hall resistance. Phys. Rev. Lett. 45, 494-497 (1980).
2. Mills, I. M., Mohr, P. J., Quinn, T. J., Taylor, B. N., &Williams, E. R. Adapting the International System of Units to the twenty-first century. Phil. Trans. R. Soc. A 369, 3907-3924 (2011).
3. Milton, M. J. T., Davis, R., & Fletcher, N. Towards a new SI: a review of progress made since 2011. Metrologia 51, R21-R30 (2014).
4. Kibble, B. P. in Atomic Masses and Fundamental Constants Vol. 5 (eds Sanders, J. H., & Wapstra, A. H.) 545-551 (New York, 1976).
5. JCGM 200:2012 (E/F) International vocabulary of metrology-Basic and general concepts and associated terms (VIM), 3rd edn (JCGM, 2012).
6. Laughlin, R. B. Quantized Hall conductivity in two dimensions. Phys. Rev. B 23, 5632 (1981).
7. Niu, Q., Thouless, D. J., & Wu, Y. Quantized Hall conductance as a topological invariant. Phys. Rev. B 31, 3372 (1985).
8. Thouless, D. J. Topological interpretations of quantum Hall conductance. J. Math. Phys. 35, 5362 (1994).
9. Penin, A. A. Quantum Hall effect in quantum electrodynamics. Phys. Rev. B 79, 113303 (2009).
10. Mohr, P. J., Taylor, B. N., & Newell, D. B. CODATA recommended values of the fundamental physical constants 2010. Rev. Mod. Phys. 84, 1527 (2012).
11. Poirier, W., & Schopfer, F. Resistance metrology based on the quantum Hall effect. Eur. Phys. J. Spec. Top. 172, 207-245 (2009).
12. Schopfer, F., & Poirier, W. Quantum resistance standard accuracy close to the zero-dissipation state. J. Appl. Phys. 114, 064508 (2013).
13. Delahaye, F., & Jeckelmann, B. Revised technical guidelines for reliable dc measurements of the quantized Hall resistance. Metrologia 40, 217 (2003).
14. Kalmbach, C.-C. et al. Towards a graphene-based quantum impedance standard. Appl. Phys. Lett. 105, 073511 (2014).
15. Poirier, W., Lafont, F., Djordjevic, S., Schopfer, F., & Devoille, L. A programmable quantum current standard from the Josephson and the quantum Hall effects. J. Appl. Phys. 115, 044509 (2014).
16. Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005).
17. Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204 (2005).
18. Giesbers, A. J. M. et al. Quantum resistance metrology in graphene. Appl. Phys. Lett. 93, 222109 (2008).
19. Guignard, J., Leprat, D., Glattli, D. C., Schopfer, F., & Poirier, W. Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements. Phys. Rev. B 85, 165420 (2012).
20. Woszczyna, M. et al. Precision quantization of Hall resistance in transferred graphene. Appl. Phys. Lett. 100, 164106 (2012).
21. Satrapinski, A., Novikov, S., & Lebedeva, N. Precision quantum Hall resistance measurement on epitaxial graphene device in low magnetic field. Appl. Phys. Lett. 103, 173509 (2013).
22. Lafont, F. et al. Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition. Phys. Rev. B 90, 115422 (2014).
23. Shen, T. et al. Quantum Hall effect on centimeter scale chemical vapor deposited graphene films. Appl. Phys. Lett. 99, 232110 (2011).
24. Schopfer, F., & Poirier, W. Graphene-based quantum Hall effect metrology. MRS Bull. 37, 1255-1264 (2012).
25. Jeckelmann, B., Jeanneret, B., & Inglis, D. High-precision measurements of the quantized Hall resistance: experimental conditions for universality. Phys. Rev. B 55, 13124 (1997).
26. Tzalenchuk, A. et al. Towards a quantum resistance standard based on epitaxial graphene. Nature Nanotech. 5, 186-189 (2010).
27. Janssen, T. J. B. M. et al. Graphene, universality of the quantum Hall effect and redefinition of the SI system. New J. Phys. 13, 093026 (2011).
28. Janssen, T. J. B. M. et al. Precision comparison of the quantum Hall effect in graphene and gallium arsenide. Metrologia 49, 294-306 (2012).
29. Michon, A. et al. Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition. Appl. Phys. Lett. 97, 171909 (2010).
30. Berger, C. et al. Electronic confinement and coherence in patterned epitaxial graphene. Science 3012, 1191 (2006).
31. Michon, A. et al. Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition. J. Appl. Phys. 113, 203501 (2013).
32. Altshuler, B. L., & Aronov, A. G. Electron-Electron Interactions in Disordered Conductors (Elsevier, 1985).
33. Piquemal, F. et al. Report on a joint BIPM-EUROMET project for the fabrication of QHE samples by the LEP. IEEE Trans. Instrum. Meas. 42, 264-268 (1993).
34. Janssen, T. J. B. M. et al. Anomalously strong pinning of the filling factor ? = 2 in epitaxial graphene. Phys. Rev. B 83, 233402 (2011).
35. Lafont, F. et al. Quantum Hall resistance standard based on graphene grown by chemical vapor deposition on silicon carbide. Nature Commun. 6, 6806 (2015).
36. Bloch, F., Cugat, O., Meunier, G., & Toussaint, J. C. Innovating approaches to the generation of intense magnetic fields: design and optimization of a 4 tesla permanent magnet flux source. IEEE Trans. Magn. 34, 2465-2468 (1998).
37. Radebaugh, R. Cryocoolers: the state of the art and recent developments. J. Phys. Condens. Matter 21, 164219 (2009).
38. Allan, D. W. Should the classical variance be used as a basic measure in standards metrology? IEEE Trans. Instrum. Meas. 36, 646-654 (1987).
39. Hartland, A., Jones, K., Williams, J. M., Gallagher, B. L., & Galloway, T. Direct comparison of the quantized Hall resistance in gallium arsenide and silicon. Phys. Rev. Lett. 66, 969-973 (1991).
40. Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192-200 (2012).
41. Michon, A. et al. X-ray diffraction and Raman spectroscopy study of strain in graphene films grown on 6H-SiC(0001) using propane-hydrogen-Argon CVD. Mater. Sci. Forum 740-742, 117-120 (2013).
42. Lara-Avila, S. et al. Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure. Adv. Mater. 23, 878-882 (2011).
43. Jabakhanji, B. et al. Tuning the transport properties of graphene films grown by CVD on SiC(0001): effect of in situ hydrogenation and annealing. Phys. Rev. B 89, 085422 (2014).