Investigation of Photovoltaic Properties of Single Core-Shell GaN/InGaN Wires

ACS Applied Materials and Interfaces

Volumn 7, Issue 39, 2015, Pages 21898-21906

  Messanvi, A ^a,b,c   Zhang, H ^a   Neplokh, V ^a   Julien, F H ^a   Bayle, F ^a   Foldyna, M ^d   Bougerol, C ^b,e   Gautier, E ^b,c   Babichev, A ^f   Durand, C ^b,c   Eymery, J ^b,c   Tchernycheva, M ^a  

^a CNRS   (France)

^b UNIV GRENOBLE ALPES   (France)

^c CEA GRENOBLE   (France)

^d LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^e LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^f ITMO UNIVERSITY   (Russian Federation)

Author keywords

EBIC; InGaN GaN MQWs; MOVPE; photocurrent spectroscopy; photovoltaics; wires

Indexed keywords

CONVERSION EFFICIENCY; EFFICIENCY; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; PASSIVATION; SAPPHIRE; SHELLS (STRUCTURES); WIRE;

EBIC; INGAN/GAN MQWS; INGAN/GAN QUANTUM WELL; METAL-ORGANIC VAPOR PHASE EPITAXY; PHOTOCURRENT SPECTROSCOPY; PHOTOVOLTAIC PERFORMANCE; PHOTOVOLTAIC PROPERTY; PHOTOVOLTAICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84944096969     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b06473     Document Type: Article

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