Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

Japanese Journal of Applied Physics

Volumn 54, Issue 7, 2015, Pages

  Redaelli, Luca ^a,b   Mukhtarova, Anna ^a,b   Ajay, Akhil ^a,b   Núñez Cascajero, Arántzazu ^a,b,c   Valdueza Felip, Sirona ^a,b   Bleuse, Joël ^a,b   Durand, Christophe ^a,b   Eymery, Joël ^a,b   Monroy, Eva ^a,b  

^a UNIV GRENOBLE ALPES   (France)

^b CEA GRENOBLE   (France)

^c UNIVERSITY OF ALCALÁ   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; GALLIUM ALLOYS; III-V SEMICONDUCTORS; INDIUM ALLOYS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SEMICONDUCTOR ALLOYS; SOLAR CELLS; WAVE FUNCTIONS;

BARRIER THICKNESS; CARRIER EXTRACTION; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; HOLE WAVE FUNCTIONS; INTERNAL POLARIZATION FIELDS; PHOTORESPONSES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84933566723     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.54.072302     Document Type: Article

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