Single-wire light-emitting diodes based on gan wires containing both polar and nonpolar InGaN/GaN quantum wells

Applied Physics Express

Volumn 5, Issue 1, 2012, Pages

  Jacopin, Gwénolé ^a   De Luna Bugallo, Andrés ^a   Lavenus, Pierre ^a   Rigutti, Lorenzo ^a   Julien, François H ^a   Zagonel, Luiz F ^b,c   Kociak, Mathieu ^b   Durand, Christophe ^d   Salomon, Damien ^d,e   Chen, Xiao Jun ^d   Eymery, Joël ^d   Tchernycheva, Maria ^a  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SUD   (France)

^c CENTRO NACIONAL DE PESQUISA EM ENERGIA E MATERIAIS   (Brazil)

^d UNIV GRENOBLE ALPES   (France)

^e CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE; CURRENT INJECTIONS; INGAN/GAN QUANTUM WELL; LOWER ENERGIES; METAL-ORGANIC VAPOR PHASE EPITAXY; MULTI QUANTUM WELLS; NON-POLAR; SAMPLE TEMPERATURE; UPPER SURFACE; VISIBLE SPECTRAL RANGE;

ELECTROLUMINESCENCE; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS;

WIRE;

EID: 84862915110     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.014101     Document Type: Article

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