Growth kinetics and mass transport mechanisms of GaN columns by selective area metal organic vapor phase epitaxy

Journal of Applied Physics

Volumn 115, Issue 16, 2014, Pages

  Wang, Xue ^a   Hartmann, Jana ^a   Mandl, Martin ^a,b   Sadat Mohajerani, Matin ^a   Wehmann, Hergo H ^a   Strassburg, Martin ^b   Waag, Andreas ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; KINETICS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOMASKS; SAPPHIRE; THREE DIMENSIONAL; VAPORS;

DIFFUSION FLUXES; DIFFUSION LENGTH; GROWTH MODELING; LATERAL GROWTH RATES; METAL-ORGANIC VAPOR PHASE EPITAXY; SELECTIVE AREAS; SOLID STATE LIGHTING; TRANSPORT MECHANISM;

GALLIUM NITRIDE;

EID: 84900035500     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4871782     Document Type: Article

References (32)

1. A. Waag, X. Wang, S. Fündling, J. Ledig, M. Erenburg, R. Neumann, M. A. M. Al-Suleiman, J. D. Wei, S. F. Li, H.-H. Wehmann, W. Bergbauer, M. Straßburg, A. Trampert, and H. Riechert, Phys. Status Solidi C 8, 2296 (2011). 10.1002/pssc.201000989
2. S. F. Li and A. Waag, Appl. Phys. Rev. 111, 071101 (2012). 10.1063/1.3694674
3. M. Mandl, X. Wang, T. Schimpke, C. Kölper, M. Binder, J. Ledig, A. Waag, X. Kong, A. Trampert, F. Bertram, J. Christen, F. Barbagini, E. Calleja, and M. Strassburg, Phys. Status Solidi RRL 7, 800 (2013). 10.1002/pssr.201307250
4. B. S. Simpkins, K. M. MoCoy, L. J. Whitman, and P. E. Pehrsson, Nanotechnology 18, 355301 (2007). 10.1088/0957-4484/18/35/355301
5. V. Dobrokhotov, D. N. McIlroy, M. G. Norton, A. Abuzir, W. J. Yeh, I. Stevenson, R. Pouy, J. Bochenek, M. Cartwright, L. Wang, J. Dawson, M. Beaux, and C. Berven, J. Appl. Phys. 99, 104302 (2006). 10.1063/1.2195420
6. C. Chèze, L. Geelhaar, O. Brandt, W. M. Weber, H. Riechert, S. Münch, R. Rothemund, S. Reitzenstein, A. Forchel, T. Kehagias, P. Komninou, G. P. Dimitrakopulos, and T. Karakostas, Nano Res. 3, 528 (2010). 10.1007/s12274-010-0013-9
7. S. F. Li, X. Wang, M. S. Mohajerani, S. Fündling, M. Erenburg, J. D. Wei, H.-H. Wehmann, A. Waag, M. Mandl, W. Bergbauer, and M. Strassburg, J. Cryst. Growth 364, 149 (2013). 10.1016/j.jcrysgro.2012.11.027
8. F. Liu, R. Collazo, S. Mita, Z. Sitar, G. Duscher, and S. J. Pennycook, Appl. Phys. Lett. 91, 203115 (2007). 10.1063/1.2815748
9. S. F. Li, S. Fündling, X. Wang, M. Erenburg, M. A. M. Al-Suleiman, J. D. Wei, W. Bergbauer, M. Strassburg, H.-H. Wehmann, and A. Waag, Phys. Status Solidi C 8, 2318 (2011). 10.1002/pssc.201001003
10. X. J. Chen, J. S. Hwang, G. Perillat-Merceroz, S. Landis, B. Martin, D. Le. Si Dang, J. Eymery, and C. Durand, J. Cryst. Growth 322, 15 (2011). 10.1016/j.jcrysgro.2011.03.007
11. O. Ambacher, J. Phys. D: Appl. Phys. 31, 2653 (1998). 10.1088/0022-3727/31/20/001
12. X. Wang, S. F. Li, S. Fündling, J. D. Wei, M. Erenburg, H. H. Wehmann, A. Waag, W. Bergbauer, M. Strassburg, U. Jahn, and H. Riechert, Cryst. Growth Des. 12, 2552 (2012). 10.1021/cg3001637
13. V. G. Dubrovskii, V. Consonni, L. Geelhaar, A. Trampert, and H. Riechert, Appl. Phys. Lett. 100, 153101 (2012). 10.1063/1.3701591
14. A. Bengoechea-Encabo, F. Barbagini, S. Fernandez-Garrido, J. Grandal, J. Ristic, M. A. Sanchez-Garcia, E. Calleja, U. Jahn, E. Luna, and A. Trampert, J. Cryst. Growth 325, 89 (2011). 10.1016/j.jcrysgro.2011.04.035
15. V. Consonni, V. G. Dubrovskii, A. Trampert, L. Geelhaar, and H. Riechert, Phys. Rev. B 85, 155313 (2012). 10.1103/PhysRevB.85.155313
16. L. E. Jensen, M. T. Björk, S. Jeppesen, A. I. Persson, B. J. Ohlsson, and L. Samuelson, Nano Lett. 4, 1961 (2004). 10.1021/nl048825k
17. Y. Takahashi, S. Sakai, and M. Umeno, J. Cryst. Growth 68, 206 (1984). 10.1016/0022-0248(84)90418-4
18. Y. D. Galeuchet, P. Roentgen, and V. Graf, J. Appl. Phys. 68, 560 (1990). 10.1063/1.346829
19. E. Colas, A. Shahar, B. D. Soole, W. J. Tomlinson, J. R. Hayes, C. Caneau, and R. Bhat, J. Cryst. Growth 107, 226 (1991). 10.1016/0022-0248(91) 90461-D
20. O. Kayser, J. Cryst. Growth 107, 989 (1991). 10.1016/0022-0248(91)90592-S
21. R. Bhat, J. Cryst. Growth 120, 362 (1992). 10.1016/0022-0248(92)90419-J
22. T. Sasaki, M. Kitamura, and I. Mito, J. Cryst. Growth 132, 435 (1993). 10.1016/0022-0248(93)90069-9
23. M. Gibbon, J. P. Stagg, C. G. Cureton, E. J. Thrush, C. J. Jones, R. E. Mallard, R. E. Pritchard, N. Collis, and A. Chew, Semicond. Sci. Technol. 8, 998 (1993). 10.1088/0268-1242/8/6/006
24. V. Ruth and J. P. Hirth, J. Chem. Phys. 41, 3139 (1964). 10.1063/1.1725687
25. S. Haffouz, B. Beaumont, and P. J. Gibart, MRS Internet J. Nitride Semicond. Res. 3, 8-1 (1998).
26. X. Wang, S. F. Li, S. Fündling, H.-H. Wehmann, M. Strassburg, H.-J. Lugauer, U. Steegmüller, and A. Waag, J. Phys. D: Appl. Phys. 46, 205101 (2013). 10.1088/0022-3727/46/20/205101
27. X. Wang, U. Jahn, J. Ledig, H.-H. Wehmann, M. Mandl, M. Straßburg, and A. Waag, J. Cryst. Growth 384, 61 (2013). 10.1016/j.jcrysgro.2013.09.015
28. X. Liu, L. Wang, D.-C. Lu, D. Wang, X. Wang, and L. Lin, J. Cryst. Growth 189/190, 287 (1998). 10.1016/S0022-0248(98)00264-4
29. E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, Appl. Phys. Lett. 71, 921 (1997). 10.1063/1.119689
30. M. Yoshikawa, M. Kunzer, J. Wagner, H. Obloh, P. Schlotter, R. Schmidt, N. Herres, and U. Kaufmann, J. Appl. Phys. 86, 4400 (1999). 10.1063/1.371377
31. I.-H. Lee, J. J. Lee, P. Kung, F. J. Sanchez, and M. Razeghi, Appl. Phys. Lett. 74, 102 (1999). 10.1063/1.122964
32. X. Zhang, S.-J. Chua, W. Liu, and K.-B. Chong, Appl. Phys. Lett. 72, 1890 (1998). 10.1063/1.121217