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Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

(5) Lang, J R a Young, N G a Farrell, R M a Wu, Y R b Speck, J S a

a University of California (United States)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL FORMULAS; APPLIED BIAS; BARRIER THICKNESS; CARRIER ESCAPE MECHANISM; CARRIER ESCAPES; DRIFT DIFFUSION; HIGH FIELD; INGAN QUANTUM WELLS; INGAN/GAN MULTI-QUANTUM WELL; INTERNAL QUANTUM EFFICIENCY; RECOMBINATION LIFETIME; THIN BARRIERS;

SOLAR CELLS; THERMIONIC EMISSION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84868663432 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4765068 Document Type: Article

Times cited : (83)

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