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Volumn 102, Issue 9, 2013, Pages

Suppressing void defects in long wavelength semipolar (2021) InGaN quantum wells by growth rate optimization

(9) Zhao, Yuji a Wu, Feng a Huang, Chia Yen a Kawaguchi, Yoshinobu a Tanaka, Shinichi a Fujito, Kenji b Speck, James S a Denbaars, Steven P a Nakamura, Shuji a

a University of California (United States)

b MITSUBISHI CHEMICAL CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; GROWTH STUDIES; INGAN QUANTUM WELLS; LONG WAVELENGTH; RATE OPTIMIZATIONS; SEMIPOLAR; SPECTRAL REGION; VOID DEFECTS;

DEFECTS; GROWTH RATE; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 84875163169 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4794864 Document Type: Article

Times cited : (27)

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