High conductivity in Si-doped GaN wires

Applied Physics Letters

Volumn 102, Issue 12, 2013, Pages

  Tchoulfian, P ^a,b   Donatini, F ^b   Levy, F ^a   Amstatt, B ^a   Ferret, P ^a   Pernot, J ^b,c  

^a CEA LETI   (France)

^b CNRS   (France)

^c INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT INCORPORATION; FOUR-PROBE MEASUREMENT; METAL-ORGANIC VAPOUR PHASE EPITAXY; NEAR-BAND EDGE LUMINESCENCE; RESISTIVITY MEASUREMENT; RESISTIVITY VALUES; TEMPERATURE DEPENDENCE; TEMPERATURE-DEPENDENT RESISTIVITY;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SILICON;

DOPING (ADDITIVES);

EID: 84875926186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799167     Document Type: Article

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