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Volumn 98, Issue 24, 2011, Pages

Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

(10) Neufeld, Carl J a Cruz, Samantha C a Farrell, Robert M a Iza, Michael a Lang, Jordan R a Keller, Stacia a Nakamura, Shuji a Denbaars, Steven P a Speck, James S a Mishra, Umesh K a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CARRIER COLLECTION; EFFECT OF DOPING; ENERGY-BAND DIAGRAM; FILL FACTOR; INGAN QUANTUM WELLS; PIEZOELECTRIC POLARIZATIONS; SHEET CHARGES;

GALLIUM COMPOUNDS; OPEN CIRCUIT VOLTAGE; POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79960569417 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3595487 Document Type: Article

Times cited : (75)

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