Electromigration immortality of purely intermetallic micro -bump for 3D integration

Proceedings - Electronic Components and Technology Conference

Volumn 2015-July, Issue , 2015, Pages 620-625

  Chen, Hsiao Yun ^a   Tung, Chih Hang ^a   Hsiao, Yi Li ^a   Wu, Jyun Lin ^a   Yeh, Tung Ching ^a   Lin, Larry Liang Chen ^a   Chen, Chih ^b   Yu, Douglas Cheng Hua ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTLES; DEGRADATION; ELECTRIC CURRENT CARRYING CAPACITY (CABLES); ELECTROMIGRATION; INTERMETALLICS; JOINING; NETWORK COMPONENTS;

3-D INTEGRATION; CURRENT CARRYING CAPABILITY; DEGRADATION MECHANISM; JOINING TECHNOLOGY; RESISTANCE FLUCTUATION; TEST CIRCUIT; THREE DIMENSIONAL INTEGRATED CIRCUITS (3-D IC); VOID FORMATION;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 84942118744     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2015.7159656     Document Type: Conference Paper

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