Evaluation of electromigration behaviors of Pb-free microbumps in three-dimensional integrated circuit packaging

Journal of Electronic Materials

Volumn 43, Issue 1, 2014, Pages 236-246

  Hsu, Hao ^a   Lin, Tzu Yang ^a   Ouyang, Fan Yi ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

3D IC; Electromigration; intermetallic compound; Pb free; voids on Al trace

Indexed keywords

CURRENT-STRESSING; ELECTRICAL CURRENT; ELECTROMIGRATION BEHAVIOR; PB-FREE; RESISTANCE FLUCTUATION; THREE DIMENSIONAL INTEGRATED CIRCUITS; UNDER BUMP METALLIZATION; VOIDS ON AL TRACE;

CATHODES; CURRENT DENSITY; ELECTROMIGRATION; INTERMETALLICS; LEAD; POWER ELECTRONICS; SOLDERING ALLOYS; THREE DIMENSIONAL;

LEAD COMPOUNDS;

EID: 84891831531     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-013-2840-4     Document Type: Article

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