Electromigration in Ni/Sn intermetallic micro bump joint for 3D IC chip stacking

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 351-357

  Lin, Yu Min ^a   Zhan, Chau Jie ^a   Juang, Jing Ye ^a   Lau, John H ^a   Chen, Tai Hong ^a   Lo, Robert ^a   Kao, M ^a   Tian, Tian ^b   Tu, King Ning ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP STACKING; CHIP-ON-CHIP; CURRENT-STRESSING; ELECTROMIGRATION BEHAVIOR; ELECTROMIGRATION RELIABILITY; FOUR-POINT; IC CHIPS; IN-SITU; JOINT RESISTANCE; JOINT STRUCTURE; KELVIN STRUCTURES; LEAD FREE SOLDERS; MICRO-BUMPS; MICRO-JOINT; MICROSTRUCTURE EVOLUTIONS; MICROSTRUCTURE OBSERVATION; POST TREATMENT; RESISTANCE INCREASE; RESISTANCE VARIATIONS; SOLDER MATERIAL; STEADY STATE; TEST VEHICLE; TESTING RESULTS; TESTING TIME; TIME TO FAILURE; TYPE II; UNDER BUMP METALLIZATION;

ELECTROMIGRATION; MICROSTRUCTURE; THERMAL AGING; THREE DIMENSIONAL;

TIN;

EID: 79960416815     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898537     Document Type: Conference Paper

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