Reliability testing of Cu-Sn intermetallic micro-bump interconnections for 3D-device stacking

Electronics System Integration Technology Conference, ESTC 2010 - Proceedings

Volumn , Issue , 2010, Pages

  Labie, R ^a   Limaye, P ^a   Lee, K W ^b   Berry, C J ^b   Beyne, E ^a   De Wolf, I ^a  

^a IMEC   (Belgium)

^b Amkor ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU-SN INTERMETALLICS; DEVICE STACKING; ELECTRICAL BEHAVIORS; FLIP CHIP BUMPS; MICRO-BUMPS; RELIABILITY TESTING; THERMO-MECHANICAL BEHAVIORS;

ELECTROMIGRATION; FLIP CHIP DEVICES; THERMAL CYCLING;

TIN;

EID: 78651336275     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESTC.2010.5642925     Document Type: Conference Paper

References (7)

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2. Quitoriano N, Wong WS, Tsakaloakos L, Cho Y, Sands T. Kinetics of the Pd/In bilayer reaction: implications for transient-liquid-phase wafer bonding. Journal of Electronic Materials 2001; 30 (11), p1471-75.
3. Agarwal R, Zhang W, Limaye P, Labie R, Dimcic B, Phommahaxay A, Soussan P. Cu/Sn Microbumps Interconnect for 3D TSV Chip Stacking. Proceedings ECTC 2010;, p415.
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6. Kim JY, Jin Y. Effects of residual impurities in electroplated Cu on the Kirkendall void formation during soldering, Applied Physics Letters 2008; 92 (9), 092109.
7. Labie R, Ruythooren W, Baert K, Beyne E, Swinnen B. Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking, Proceedings IITC 2008, p19-21.