Electromigration study of micro bumps at Si/Si interface in 3DIC package for 28nm technology and beyond

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2011, Pages 346-350

  Lin, T H ^a   Wang, R D ^a   Chen, M F ^a   Chiu, C C ^a   Chen, S Y ^a   Yeh, T C ^a   Lin, Larry C ^a   Hou, S Y ^a   Lin, J C ^a   Chen, K H ^a   Jeng, S P ^a   Yu, Douglas C H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH CURRENT DENSITIES; IN-SITU; JOINT STRUCTURE; MICRO-BUMPS; RESISTANCE CHANGE; RESISTANCE SHIFTS; SILICON SUBSTRATES; SILICON-SILICON INTERFACE; TEST CONDITION; TEST DATA;

ELECTROMIGRATION; JOINING; METALLIC COMPOUNDS; NANOTECHNOLOGY; NICKEL METALLURGY; TIN;

TECHNOLOGY;

EID: 79960417647     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2011.5898536     Document Type: Conference Paper

References (11)

1. K. N. Tu, "Recent advances on electromigration in verylarge-scale-integrationi of interconnects", J. Appl. Phys. Vol. 94, No. 9 (2003), pp. 5451-5473.
2. J. W. Nah, J. O. Suh, K. N. Tu, S. W. Yoon, C. T. Chong, V. Kripesh, B. R. Su, and C. Chen, "Electromigration in Pb-free solder bumps with Cu column as flip chip joints", Proc 56th Electronic Components and Technology Conf, San Diego, CA, May. 2006, pp. 657-662.
3. T. Miyazaki, and T. Omata, "Electromigration degradation mechanism for Pb-free flip-chip micro solder bumps", Microelectronics Reliability. Vol. 46 (2006), pp. 1898-1903.
4. C. H. Lee, "Interconnection with copper pillar bumps: process and applications", Proc Interconnect Technology Conf, Sapporo, Hokkaido, June, 2009, pp. 214-216.
5. S. Lee, Y. X. Guo, and C. K. Ong, "Eletromigation effect on Cu-pillar (Sn) bumps" Proc 7th Electronic Packaging Technology Conf, Singapore, Dec. 2005, pp. 135-139.
6. Y. S. Lai, and Y. T. Chiu, C. W. Lee, Y. H. Shao, and J. Chen "Electromigration reliability and morphologies of Cu pillar flip-chip solder joints", Proc 58th Electronic Components and Technology Conf, Lake Buena Vista, FL, May. 2008, pp. 330-335.
7. Y. W. Chang, T. H. Chiang, and C. Chen, "Effect of voids propagation on bump resistacne due to lectromigration in flip-chip solder joints using kelvin Structure", Appl. Phys. Lett., Vol. 91, (2007), pp. 132113-1.
8. Z. Huang, R. Chatterjee, P. Justison, R. Hernandez, S. Pozder, A. Jain, E. Acosta, D. A. Gajewski, V. Mathew, and R. E. Jones, "Electromigration of Cu-Sn-Cu Micropads in 3D Interconnect", Proc 58th Electronic Components and Technology Conf, Lake Buena Vista, FL, May. 2008, pp. 12-17.
9. D. Q. Yu, T. C. Chai, M. L. Thew, Y. Y. Ong, V. S. Rao, L. C. Wai, and J. H. Lau, "Electromigration study of 50 μm pitch micro solder bumps using four-point kelvin Structure", Proc 59th Electronic Components and Technology Conf, San Diego, CA, May. 2009, pp. 930-935.
10. B. Li, C. Christiansen, J. Gill, and T. Sullivan, "Threshold electromigration and its statistics for Cu interconnects", J. Appl. Phys. Vol. 100, No. 11 (2006), pp. 114516-1-10.
11. JEDEC standard, "Guideline for characterizing solder bump electromigration under constant current and temperature stress" JEDEC Publication, No 154, Jan. 2008.