Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors

Applied Physics Letters

Volumn 107, Issue 11, 2015, Pages

  Kamalakar, M Venkata ^a   Madhushankar, B N ^a   Dankert, André ^a   Dash, Saroj P ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC DEVICES; IONIC LIQUIDS; LIQUIDS; NANOELECTRONICS; PHOSPHORUS;

AMBIPOLAR BEHAVIOR; ELECTRIC DOUBLE LAYER; ELECTROSTATIC CONDITIONS; NANOELECTRONIC DEVICES; SUB-THRESHOLD SWING(SS); SWITCHING PERFORMANCE; TRANSISTOR CHANNELS; TWO-DIMENSIONAL CRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 84941914432     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4930236     Document Type: Article

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