Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films

Nature Nanotechnology

Volumn 10, Issue 7, 2015, Pages 608-613

  Li, Likai ^a,b   Ye, Guo Jun ^b,c,d   Tran, Vy ^e   Fei, Ruixiang ^e   Chen, Guorui ^a,b   Wang, Huichao ^f   Wang, Jian ^f   Watanabe, Kenji ^g   Taniguchi, Takashi ^g   Yang, Li ^e   Chen, Xian Hui ^b,c,d   Zhang, Yuanbo ^a,b  

^a FUDAN UNIVERSITY   (China)

^b School of Electronic Science and Engineering   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^e WASHINGTON UNIVERSITY   (United States)

^f PEKING UNIVERSITY   (China)

^g NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON GAS; ELECTRONIC PROPERTIES; III-V SEMICONDUCTORS; PHOSPHORUS;

CONCEPTUAL DEVELOPMENT; HEXAGONAL BORON NITRIDE; HIGH CARRIER MOBILITY; MAGNETIC FIELD DEPENDENCES; OPTOELECTRONIC PROPERTIES; QUANTUM OSCILLATIONS; TWO-DIMENSIONAL CRYSTALS; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

TWO DIMENSIONAL ELECTRON GAS;

PHOSPHORUS; BLACK PHOSPHORUS; PHOSPHORUS DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CRYSTAL STRUCTURE; CYCLOTRON; ELECTRON; GAS; LOW TEMPERATURE; MAGNETIC FIELD; OSCILLATION; PRIORITY JOURNAL; QUANTUM MECHANICS; TEMPERATURE DEPENDENCE; TRANSITION TEMPERATURE; TWO DIMENSIONAL ELECTRON GAS; CONDUCTANCE; ELECTRIC FIELD; FIELD EFFECT TRANSISTOR; QUANTUM CHEMISTRY; REDUCTION; SURFACE PROPERTY;

EID: 84938375247     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.91     Document Type: Article

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