Polarized raman signals from Si wafers: Dependence of in-plane incident orientation of probing light

ECS Journal of Solid State Science and Technology

Volumn 4, Issue 9, 2015, Pages P356-P363

  Yoo, Woo Sik ^a   Harima, Hiroshi ^b   Yoshimoto, Masahiro ^b  

^a WaferMasters Inc   (United States)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

RAMAN SPECTROSCOPY; SILICON; SPECTRAL RESOLUTION;

HIGH SPECTRAL RESOLUTION; MULTIWAVELENGTH; POLARIZATION BEHAVIOR; POLARIZED RAMAN; POLYCHROMATORS; RAMAN INTENSITIES; RAMAN MEASUREMENTS; WAFER ROTATIONS;

SILICON WAFERS;

EID: 84941117096     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.0061509jss     Document Type: Article

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