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Volumn , Issue , 2009, Pages 79-83
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Characterization of uni-axially stressed Si and Ge concentration in Si 1-xGex using polychromator-based multi-wavelength Raman spectroscopy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
DESIGN CONCEPT;
EPITAXIALLY GROWN;
EXCITATION WAVELENGTH;
GE CONCENTRATIONS;
GE CONTENT;
INLINE PROCESS MONITORING;
LONG-TERM MEASUREMENTS;
MEASUREMENT RESOLUTION;
MULTIWAVELENGTH;
NON DESTRUCTIVE;
POLYCHROMATORS;
PROCESS CHARACTERIZATION;
RAMAN MEASUREMENTS;
SEMICONDUCTOR INDUSTRY;
STRESS/STRAIN;
PROCESS MONITORING;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR JUNCTIONS;
SILICON;
GERMANIUM;
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EID: 77950156106
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IWJT.2009.5166224 Document Type: Conference Paper |
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Times cited : (16)
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References (13)
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