Noncontact in-line monitoring of Ge content and thickness variations of epitaxial Si1-xGex layers on Si(100) using polychromator-based multiwavelength micro-raman spectroscopy

Applied Physics Express

Volumn 3, Issue 10, 2010, Pages

  Tzeng, Yu Fen ^a   Ku, Scott ^a   Chang, Stock ^a   Yang, Chi Ming ^a   Chern, Chyi Shieng ^a   Lin, John ^a   Hasuike, Noriyuki ^b   Harima, Hiroshi ^b   Ueda, Takeshi ^c   Ishigaki, Toshikazu ^c   Kang, Kitaek ^c   Yoo, Woo Sik ^c  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^c WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL SI; FOCAL LENGTHS; GE CONTENT; HIGH-RESOLUTION X-RAY DIFFRACTION; IN-LINE; IN-LINE MONITORING; MATERIAL PROPERTY; MICRO RAMAN SPECTROSCOPY; MULTIWAVELENGTH; NON DESTRUCTIVE; NON-CONTACT; POLYCHROMATORS; RAMAN SYSTEMS; SECONDARY ION MASS SPECTROSCOPY; SI(1 0 0); THICKNESS VARIATION;

DEPTH PROFILING; GERMANIUM; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICON; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78549244768     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.106601     Document Type: Article

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