Non-destructive characterization of metal-semiconductor interface by Raman scattering

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 117-120

  Harima, Hiroshi ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SCATTERING; SEMICONDUCTOR MATERIALS;

INTERFACE INTERACTIONS; MANUFACTURING PROCESSES; METAL-SEMICONDUCTOR INTERFACES; METALLIC ELECTRODES; NON CONTACTS; NONDESTRUCTIVE; POWERFUL TOOLS; SCALE CHARACTERIZATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 48349117209     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.367990     Document Type: Conference Paper

References (11)

1. R.W.Mann, L.A.Clevenger, P.D.Agnello and F.R.White, IBM J. Res. Develop, vol.39 (1995) p.403.
2. F.F.Zhao, S.Y.Chen, Z.X.Shen, X.S.Gao, J.Z.Zheng, A.K.See and L.H.Chan, J. Vac.Sci.Technol.B vol.21 (2003) p. 862
3. F.Meinardi, S.Quilici, A.Borghesi and G.Artioli, Appl. Phys. Lett, vol.75 (1999) p.3090.
4. E.H.Lim, G.Karunasiri, S.J.Chua, H.Wong, K.L.Pey and K.H.Lee, IEEE Electron Device Lett., vol.90 (1998) 171.
5. P.S.Lee, D.Mangelinck, K.L.Pey, Z.X.Shen., J.Ding., T.Osipowicz and A.K.See, Electrchem. Solid-State Lett. vol.3 (2000) p. 153.
6. T. Sasaki, S.Nishibe and H.Harima, contributed to this conference.
7. S.Bocelli, G.Guizzetti, F.Marabell, G.Thungström and C.S.Petersson, Appl.Surf. Sci. vol.91 (1995) p.30.
8. J.Zhao, L.Ballast, T.Z.Hossain and W.C.Briggman, J.Vac.Sci.Technol.A vol.18 (2000) p. 1690.
9. P.J.Codella, F.Adarand Y.S.Liu, Appl. Phys. Lett. vol.46 (1985) p. 1076.
10. I.De.Wolf, D.J.Howard, A.Lauwers, K.Maex and H.E.Maes, Appl. Phys. Lett, vol.70 (1997) p.2262.
11. J.Heyeongtag, C.A.Sukow, J.W.Honeycutt, G.A.Rozgonyi and R.J.Nemanich, J.Appl. Phys. vol.71 (1992) p.4629.