Strain characterization: Techniques and applications

Solid State Technology

Volumn 52, Issue 2, 2009, Pages

  Belyansky, M ^a,b   Domenicucci, A ^a   Klymko, N ^a   Li, J ^a   Madan, A ^a  

^a IBM   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE;

ANALYTICAL TECHNIQUES; MANUFACTURING CONTROLS; SEMICONDUCTOR INDUSTRIES; STRAIN CHARACTERIZATIONS; STRAIN ENGINEERINGS;

SEMICONDUCTOR DEVICES;

EID: 62749168366     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (17)

1. S. E. Thompson, et al., "A Logic Nanotechnology Featuring Strained-Silicon," IEEE Elect. Device Lett., 25,4, p.191, 2004.
2. C. J. Smith, "Piezoresistive Effect in Germanium and Silicon," Phys. Rev, 94, p.42, 1954.
3. K. Rim, et.,al., "Strained Si for Sub-100nm MOSFET Technology," VLSI Symp. Tech. Digest, p.98, 2002.
4. S. Yang, et., al., "Dual Stress Liner for High-performance sub-45nm Gate Length SOI CMOS Manufacturing," IEEE IEDM Conf. Proc., 28.8, p.1075, 2004.
5. L.B. Freund, S. Suresh, "Thin Film Materials: Stress, Defect Formation, and Surface Evolution," Cambridge U. Press, p. 91, 2003.
6. G. M. Lerman, "Applying Solid Immersion Near-field Optics to Raman Analysis of Strainedsilicon Thin Films," Appl. Phys. Lett., 89, 22, p.2231, 2006.
7. CD. Poweleit, "Raman Imaging of Patterned Silicon Using a Solid Immersion Lens," Appl. Phys. Lett., 73, 16, p.2275, 1998.
8. I. De Wolf, "Micro-Raman Spectroscopy to Study Local Mechanical Stress in Silicon Integrated Circuits," Semiconductor Science and Technology 11, p.139, 1996.
9. J.C. Tsang, P.M. Mooney, F. Dacol, J.O Chu, "Measurements of Alloy Composition and Strain in Thin GexSil-x Layers," J. Appl. Phys. 75, p.8098, 1994.
10. V. Poborchii, "Subwavelength-resolution Raman Microscopy of Si Structures Using Metal-particle-topped AFM Probe," Japanese J. of Appl. Phys., Part 2: Letters, 44, 6, p.202,2005.
11. D. K. Bowen, B. K. Tanner in "X-Ray Metrology in Semiconductor Manufacturing," p. 44, CRC Press Florida, 2006.
12. J.P. Dismukes, L. Ekstrom, R.J. Paff, "Lattice Parameters and Density in Germanium-Silicon Alloys," J. Phys. Chem., 68(10), p.3021,1964.
13. A. Armigliato, et.al., "Strain Characterization at the nm Scale of Sub-micron Devices by Convergent-beam Electron Diffraction," Solid State Phenomena," 82-84, p.727, 2002.
14. A. Toda, N. Ikarashi, H. Ono "Local Lattice Strain Distribution Around a Transistor Channel in Metal-oxide-semiconductor Devices," Appl. Phys. Lett., 79, p.42, 2001.
15. L. Clement et.al., "Strain Measurements by Convergent-beam electron Diffraction: The Importance of Stress Relaxation in Lamella Preparations," Appl. Phys. Lett., 85, p.651, 2004.
16. J. Li, et.,al., "Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction," MRS Proc., 913, p.157, 2006.
17. C. B. Vartuli, et.,al., "Strain Measurements Using Nano-beam Diffraction on a FE-STEM," Microscopy and Microanalysis, 13 (Suppl. 2), p.836, 2007.