Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Liu, J P ^a,c   Li, K ^a   Pandey, S M ^a   Benistant, F L ^a   See, A ^a   Zhou, M S ^a   Hsia, L C ^a   Schampers, Ruud ^b   Klenov, Dmitri O ^b  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b Thermo Fisher Scientific   (United States)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; GERMANIUM; SILICON; STRAIN CONTROL; STRAIN RELAXATION;

DEVICE CHANNELS; EMBEDDED SILICON GERMANIUMS; EPITAXIAL SILICONS; LOCAL STRAINS; NANOBEAM ELECTRON DIFFRACTIONS; SI(001); SOURCE AND DRAINS; THERMAL ANNEAL; TRANSISTOR CHANNELS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57349088158     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040323     Document Type: Article

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