Characterization of 3C-SiC epitaxial layers on TiC(111) by Raman scattering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 A, 1997, Pages 5525-5531

  Harima, Hiroshi ^a   Nakashima, Shin Ichi ^a   Carulli, John M ^b   Beetz Jr , Charles P ^b   Yoo, Woo S ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b Advanced Technology Materials Inc   (United States)

^c LAM RESEARCH CORPORATION   (United States)

Author keywords

3C SiC; Crystallinity; Epitaxial layer; Raman scattering; Stress; TiC

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; EPITAXIAL GROWTH; PHONONS; RAMAN SCATTERING; RESIDUAL STRESSES; STRAIN RATE; THERMAL EXPANSION; TITANIUM CARBIDE;

SILICON CARBIDE EPITAXIAL LAYERS;

SILICON CARBIDE;

EID: 0031219967     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.5525     Document Type: Article

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