Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices

ACS Nano

Volumn 9, Issue 7, 2015, Pages 7383-7391

  Ma, Yuqiang ^a   Liu, Bilu ^a   Zhang, Anyi ^a   Chen, Liang ^a   Fathi, Mohammad ^a   Shen, Chenfei ^a   Abbas, Ahmad N ^a   Ge, Mingyuan ^a   Mecklenburg, Matthew ^a   Zhou, Chongwu ^a  

^a University of Southern California ^*  (United States)

Author keywords

contact; field effect transistor; mobility; phase engineering; transition metal dichalcogenides; tungsten diselenide; two dimensional materials

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CONTACTS (FLUID MECHANICS); FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; TRANSITION METALS; TUNGSTEN COMPOUNDS;

CHEMICAL VAPOR DEPOSITIONS (CVD); FIELD EFFECT TRANSISTOR (FETS); ON/OFF CURRENT RATIO; SOURCE/DRAIN ELECTRODES; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE; TWO DIMENSIONAL (2 D); TWO-DIMENSIONAL MATERIALS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84938118619     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b02399     Document Type: Article

References (50)

1. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275 10.1038/nchem.1589
2. Geim, A. K.; Grigorieva, I. V. Van Der Waals Heterostructures Nature 2013, 499, 419-425 10.1038/nature12385
3. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712 10.1038/nnano.2012.193
4. Yoffe, A. D. Electronic Properties of Some Chain and Layer Compounds Chem. Soc. Rev. 1976, 5, 51-78 10.1039/cs9760500051
5. 2 Transistors ACS Nano 2014, 8, 5304-5314 10.1021/nn5015215
6. Hersam, M. C.; LeRoy, B. J. Preface to Special Topic: Two-Dimensional Materials APL Mater. 2014, 2, 092201 10.1063/1.4893496
7. 2 Monolayers Nat. Mater. 2014, 13, 1135-1142 10.1038/nmat4091
8. 2 Van Der Waals Tunnel Diodes and Transistors ACS Nano 2015, 9, 2071-2079 10.1021/nn507278b
9. 2 Using Photoluminescence Spectroscopy Nano Lett. 2014, 14, 5500-5508 10.1021/nl5014597
10. 2 Nat. Mater. 2014, 14, 290-294 10.1038/nmat4156
11. 2 by Covalent Functionalization ACS Nano 2014, 8, 10808-10814 10.1021/nn5047844
12. 2 by Benzyl Viologen J. Am. Chem. Soc. 2014, 136, 7853-7856 10.1021/ja5033327
13. 2 Thin-Film Transistors with Ion Gel Dielectrics Nano Lett. 2012, 12, 4013-4017 10.1021/nl301335q
14. 2 Transistors with High-K Dielectrics for Flexible Low-Power Systems ACS Nano 2013, 7, 5446-5452 10.1021/nn401429w
15. 2 Atomic Layers Nano Lett. 2014, 15, 709-713 10.1021/nl504256y
16. 2 Complementary Field-Effect Transistors ACS Nano 2014, 8, 4948-4953 10.1021/nn5009929
17. 2 Transistors Nano Lett. 2012, 12, 4674-4680 10.1021/nl302015v
18. 2 by Sulfur-Assisted Chemical Vapor Deposition ACS Nano 2014, 8, 11543-11551 10.1021/nn504775f
19. 2 Transistors Nat. Mater. 2014, 13, 1128 10.1038/nmat4080
20. 2/Graphene Composites with Excellent Electrochemical Performances for Lithium Ion Batteries ACS Nano 2011, 5, 4720-4728 10.1021/nn200659w
21. 2 Nanoparticles as Catalyst for Hydrogen Evolution J. Am. Chem. Soc. 2005, 127, 5308-5309 10.1021/ja0504690
22. 2 Device Nano Lett. 2014, 14, 5846-5852 10.1021/nl502741k
23. 2 Nat. Nanotechnol. 2013, 8, 497-501 10.1038/nnano.2013.100
24. 2 p-n Junctions Nat. Nanotechnol. 2014, 9, 268-272 10.1038/nnano.2014.26
25. Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-Energy Conversion and Light Emission in an Atomic Monolayer P-N Diode Nat. Nanotechnol. 2014, 9, 257-261 10.1038/nnano.2014.14
26. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y. F.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in a Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 9, 262-267 10.1038/nnano.2014.25
27. 2 Nano Lett. 2014, 14, 4592-4597 10.1021/nl501638a
28. 2 APL Mater. 2014, 2, 092516 10.1063/1.4896077
29. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
30. 2 Transistors Appl. Phys. Lett. 2013, 102, 173107 10.1063/1.4803920
31. 2 on Mica with Novel Photoluminescence Nano Lett. 2013, 13, 3870-3877 10.1021/nl401938t
32. 2 Growth by Chemical Vapor Deposition Nano Lett. 2014, 14, 464-472 10.1021/nl4033704
33. 2 Nano Lett. 2014, 14, 6418-6423 10.1021/nl502961e
34. 2 Phys. Rev. Lett. 2014, 113, 166801 10.1103/PhysRevLett.113.166801
35. Balendhran, S.; Walia, S.; Nili, H.; Ou, J. Z.; Zhuiykov, S.; Kaner, R. B.; Sriram, S.; Bhaskaran, M.; Kalantar-zadeh, K. Two-Dimensional Molybdenum Trioxide and Dichalcogenides Adv. Funct. Mater. 2013, 23, 3952-3970 10.1002/adfm.201300125
36. Gong, Y. J.; Liu, Z.; Lupini, A. R.; Shi, G.; Lin, J. H.; Najmaei, S.; Lin, Z.; Elias, A. L.; Berkdemir, A.; You, G. Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide Nano Lett. 2014, 14, 442-449 10.1021/nl4032296
37. 2 Heterojunction p-n Diode Proc. Natl. Acad. Sci. U. S. A. 2013, 110, 18076-18080 10.1073/pnas.1317226110
38. 2 Field Effect Transistors Nano Lett. 2013, 13, 1983-1990 10.1021/nl304777e
39. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792 10.1021/nl301702r
40. 2 by Silicon Nitride Thin Films with Tunable Fixed Charge Density APL Mater. 2014, 2, 092504 10.1063/1.4891824
41. 2 P- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Nano Lett. 2014, 14, 3594-3601 10.1021/nl501275p
42. Voiry, D.; Goswami, A.; Kappera, R.; Silva, C. D. C. E.; Kaplan, D.; Fujita, T.; Chen, M. W.; Asefa, T.; Chhowalla, M. Covalent Functionalization of Monolayered Transition Metal Dichalcogenides by Phase Engineering Nat. Chem. 2014, 7, 45-49 10.1038/nchem.2108
43. 2 Strongly Depends on the MX Composition Chem. Commun. 2015, 51, 8450 10.1039/C5CC00803D
44. 2 Upon Sodium Intercalation ACS Nano 2014, 8, 11394-11400 10.1021/nn505501v
45. 2 0.1. Band-Structure Calculations and Photoelectron-Spectroscopy Phys. Rev. B: Condens. Matter Mater. Phys. 1987, 35, 6195-6202 10.1103/PhysRevB.35.6195
46. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496 10.1038/nnano.2010.89
47. 2 Intercalation Compounds Chem. Mater. 1998, 10, 2152-2161 10.1021/cm980034u
48. 2 with Tunable Device Characteristics and Growth Mechanism Study ACS Nano 2015, 9, 6119-6127 10.1021/acsnano.5b01301
49. Liu, B. L.; Ren, W. C.; Gao, L. B.; Li, S. S.; Pei, S. F.; Liu, C.; Jiang, C. B.; Cheng, H. M. Metal-Catalyst-Free Growth of Single-Walled Carbon Nanotubes J. Am. Chem. Soc. 2009, 131, 2082-2083 10.1021/ja8093907
50. Stassen, A. F.; de Boer, R. W. I.; Iosad, N. N.; Morpurgo, A. F. Influence of the Gate Dielectric on the Mobility of Rubrene Single-Crystal Field-Effect Transistors Appl. Phys. Lett. 2004, 85, 3899-3901 10.1063/1.1812368