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Volumn 4, Issue , 2014, Pages

Controllable Schottky barriers between MoS2 and permalloy

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EID: 84936161443     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep06928     Document Type: Article
Times cited : (81)

References (43)
  • 1
    • 79961188826 scopus 로고    scopus 로고
    • Band-gap transition induced by interlayer van der Waals interaction in MoS{ 2}
    • Han, S. W. et al. Band-gap transition induced by interlayer van der Waals interaction in MoS{2}. Phys. Rev. B 84 (2011).
    • (2011) Phys. Rev. B , vol.84
    • Han, S.W.1
  • 3
    • 77951069162 scopus 로고    scopus 로고
    • 2
    • Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 1271-1275
    • Splendiani, A.1
  • 4
    • 84863834607 scopus 로고    scopus 로고
    • MoS(2) nanosheet phototransistors with thickness-modulated optical energy gap
    • Lee, H. S. et al. MoS(2) nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 12, 3695-3700 (2012).
    • (2012) Nano Lett. , vol.12 , pp. 3695-3700
    • Lee, H.S.1
  • 5
    • 63249130109 scopus 로고    scopus 로고
    • Electronic structure of two-dimensional crystals from ab initio theory
    • Lebègue, S. & Eriksson, O. Electronic structure of two-dimensional crystals from ab initio theory. Phys. Rev. B 79 (2009).
    • (2009) Phys. Rev. B , vol.79
    • Lebègue, S.1    Eriksson, O.2
  • 6
    • 79961237848 scopus 로고    scopus 로고
    • Influence of quantum confinement on the electronic structure of the transition metal sulfide TS-{ 2}
    • Kuc, A., Zibouche, N. & Heine, T. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS-{2}. Phys. Rev. B 83 (2011).
    • (2011) Phys. Rev. B , vol.83
    • Kuc, A.1    Zibouche, N.2    Heine, T.3
  • 8
    • 84856170872 scopus 로고    scopus 로고
    • 2 phototransistors
    • Yin, Z. et al. Single-layer MoS2 phototransistors. ACS nano 6, 74-80 (2011).
    • (2011) ACS Nano , vol.6 , pp. 74-80
    • Yin, Z.1
  • 9
    • 83655172584 scopus 로고    scopus 로고
    • 2
    • Eda, G. et al. Photoluminescence from chemically exfoliated MoS2. Nano Lett. 11, 5111-5116 (2011).
    • (2011) Nano Lett. , vol.11 , pp. 5111-5116
    • Eda, G.1
  • 11
    • 84859795935 scopus 로고    scopus 로고
    • Designing electrical contacts to MoS-{2} Monolayers: A computational study
    • Popov, I., Seifert, G. & Tománek, D. Designing Electrical Contacts to MoS-{2} Monolayers: A Computational Study. Phys. Rev. Lett. 108, 156802 (2012).
    • (2012) Phys. Rev. Lett. , vol.108 , pp. 156802
    • Popov, I.1    Seifert, G.2    Tománek, D.3
  • 12
    • 84872115141 scopus 로고    scopus 로고
    • 2 transistors with scandium contacts
    • Das, S., Chen, H. Y., Penumatcha, A. V. & Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100-105 (2013).
    • (2013) Nano Lett. , vol.13 , pp. 100-105
    • Das, S.1    Chen, H.Y.2    Penumatcha, A.V.3    Appenzeller, J.4
  • 13
    • 84880154581 scopus 로고    scopus 로고
    • Control of Schottky barriers in single layer MoS transistors with ferromagnetic contacts
    • Chen, J. R. et al. Control of Schottky Barriers in Single Layer MoS Transistors with Ferromagnetic Contacts. Nano Lett. (2013).
    • (2013) Nano Lett.
    • Chen, J.R.1
  • 14
    • 84893465925 scopus 로고    scopus 로고
    • High-performance molybdenum disulfide field-effect transistors with spin tunnel contacts
    • Dankert, A., Langouche, L., Kamalakar, M. V. & Dash, S. P. High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts. ACS nano 8, 476-482 (2014).
    • (2014) ACS Nano , vol.8 , pp. 476-482
    • Dankert, A.1    Langouche, L.2    Kamalakar, M.V.3    Dash, S.P.4
  • 15
    • 0242335138 scopus 로고    scopus 로고
    • Negative Schottky barrier between titanium and n-type Si() for low-resistance ohmic contacts
    • Tao, M., Udeshi, D., Agarwal, S., Maldonado, E. & Kirk, W. P. Negative Schottky barrier between titanium and n-type Si() for low-resistance ohmic contacts. Solid?State Electron. 48, 335-338 (2004).
    • (2004) Solid?State Electron. , vol.48 , pp. 335-338
    • Tao, M.1    Udeshi, D.2    Agarwal, S.3    Maldonado, E.4    Kirk, W.P.5
  • 16
    • 84860329324 scopus 로고    scopus 로고
    • 2 atomic layers with chemical vapor deposition
    • Lee, Y. H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012).
    • (2012) Adv. Mater. , vol.24 , pp. 2320-2325
    • Lee, Y.H.1
  • 17
    • 0024053407 scopus 로고
    • A new Richardson plot for non-ideal schottky diodes
    • Bhuiyan, A., Martinez, A. & Esteve, D. A new Richardson plot for non-ideal schottky diodes. Thin Solid Films 161, 93-100 (1988).
    • (1988) Thin Solid Films , vol.161 , pp. 93-100
    • Bhuiyan, A.1    Martinez, A.2    Esteve, D.3
  • 18
    • 0000962354 scopus 로고    scopus 로고
    • Effects of electron confinement on thermionic emission current in amodulation doped heterostructure
    • Anwar, A., Nabet, B., Culp, J. & Castro, F. Effects of electron confinement on thermionic emission current in amodulation doped heterostructure. J. Appl. Phys. 85, 2663 (1999).
    • (1999) J. Appl. Phys. , vol.85 , pp. 2663
    • Anwar, A.1    Nabet, B.2    Culp, J.3    Castro, F.4
  • 19
    • 84896376786 scopus 로고    scopus 로고
    • 2 P-type transistors and diodes enabled by high workfunction MoOx contacts
    • Chuang, S. et al. MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts. Nano Lett. (2014).
    • (2014) Nano Lett.
    • Chuang, S.1
  • 21
    • 36849134941 scopus 로고
    • Effect of surface scattering on electron mobility in an inversion layer on p-type silicon
    • Fang, F. & Triebwasser, S. Effect of surface scattering on electron mobility in an inversion layer on p-type silicon. Appl. Phys. Lett. 4, 145 (1964).
    • (1964) Appl. Phys. Lett. , vol.4 , pp. 145
    • Fang, F.1    Triebwasser, S.2
  • 22
    • 36049059178 scopus 로고
    • Transport properties of electrons in inverted silicon surfaces
    • Fang, F. & Fowler, A. Transport Properties of Electrons in Inverted Silicon Surfaces. Phys. Rev. 169, 619-631 (1968).
    • (1968) Phys. Rev. , vol.169 , pp. 619-631
    • Fang, F.1    Fowler, A.2
  • 23
    • 84883179670 scopus 로고    scopus 로고
    • Mobility engineering and ametal-insulator transition in monolayer MoS(2)
    • Radisavljevic, B.&Kis, A. Mobility engineering and ametal-insulator transition in monolayer MoS(2). Nat. Mater. 12, 815-820 (2013).
    • (2013) Nat. Mater. , vol.12 , pp. 815-820
    • Radisavljevic, B.1    Kis, A.2
  • 24
    • 85032069152 scopus 로고
    • Electronic properties of two-dimensional systems
    • Ando, T. Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437-672 (1982).
    • (1982) Rev. Mod. Phys. , vol.54 , pp. 437-672
    • Ando, T.1
  • 25
    • 84859085243 scopus 로고    scopus 로고
    • Phonon-limited mobility in ntype single-layer MoS-{2} from first principles
    • Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in ntype single-layer MoS-{2} from first principles. Phys. Rev. B 85 (2012).
    • (2012) Phys. Rev. B , vol.85
    • Kaasbjerg, K.1    Thygesen, K.S.2    Jacobsen, K.W.3
  • 26
    • 0000070925 scopus 로고
    • Mobility of charge carriers in semiconducting layer structures
    • Fivaz, R. & Mooser, E. Mobility of Charge Carriers in Semiconducting Layer Structures. Phys. Rev. 163, 743-755 (1967).
    • (1967) Phys. Rev. , vol.163 , pp. 743-755
    • Fivaz, R.1    Mooser, E.2
  • 27
    • 79955844138 scopus 로고    scopus 로고
    • Manipulating surface states in topological insulator nanoribbons
    • Xiu, F. et al.Manipulating surface states in topological insulator nanoribbons. Nat. Nanotechnol. 6, 216-221 (2011).
    • (2011) Nat. Nanotechnol. , vol.6 , pp. 216-221
    • Xiu, F.1
  • 28
    • 0035509039 scopus 로고    scopus 로고
    • Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor
    • Fert, A. & Jaffrès, H. Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor. Phys. Rev. B 64 (2001).
    • (2001) Phys. Rev. B , vol.64
    • Fert, A.1    Jaffrès, H.2
  • 29
    • 33749989400 scopus 로고    scopus 로고
    • Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets
    • Min, B. C.,Motohashi, K., Lodder, C.&Jansen, R. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Nat. Mater. 5, 817-822 (2006).
    • (2006) Nat. Mater. , vol.5 , pp. 817-822
    • Min, B.C.1    Motohashi, K.2    Lodder, C.3    Jansen, R.4
  • 30
    • 79956059593 scopus 로고    scopus 로고
    • Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
    • Hanbicki, A. T., Jonker, B. T., Itskos, G., Kioseoglou, G. & Petrou, A. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor. Appl. Phys. Lett. 80, 1240 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 1240
    • Hanbicki, A.T.1    Jonker, B.T.2    Itskos, G.3    Kioseoglou, G.4    Petrou, A.5
  • 31
    • 67649173373 scopus 로고    scopus 로고
    • Engineering of tunnel junctions for prospective spin injection in germanium
    • Zhou, Y. et al. Engineering of tunnel junctions for prospective spin injection in germanium. Appl. Phys. Lett. 94, 242104 (2009).
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 242104
    • Zhou, Y.1
  • 32
    • 1442304403 scopus 로고
    • Spin-polarized electron tunneling
    • Meservey, R. & Tedrow, P. Spin-polarized electron tunneling. Phys. Rep. 238, 173-243 (1994).
    • (1994) Phys. Rep. , vol.238 , pp. 173-243
    • Meservey, R.1    Tedrow, P.2
  • 33
    • 2942685554 scopus 로고    scopus 로고
    • Comparison of Fe/Schottky and Fe/Al[sub 2]O[sub 3] tunnel barrier contacts for electrical spin injection into GaAs
    • van't Erve, O. M. J. et al. Comparison of Fe/Schottky and Fe/Al[sub 2]O[sub 3] tunnel barrier contacts for electrical spin injection into GaAs. Appl. Phys. Lett. 84, 4334 (2004).
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 4334
    • Van't Erve, O.M.J.1
  • 34
    • 80355130232 scopus 로고    scopus 로고
    • Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry
    • Jain, A. et al. Electrical spin injection and detection at Al2O3/n-type germanium interface using three terminal geometry. Appl. Phys. Lett. 99, 162102 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 162102
    • Jain, A.1
  • 35
    • 60149094046 scopus 로고    scopus 로고
    • Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor
    • Tran, M. et al. Enhancement of the Spin Accumulation at the Interface between a Spin-Polarized Tunnel Junction and a Semiconductor. Phys. Rev. Lett. 102 (2009).
    • (2009) Phys. Rev. Lett. , vol.102
    • Tran, M.1
  • 36
    • 34547613905 scopus 로고    scopus 로고
    • Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact
    • Jonker, B. T., Kioseoglou, G., Hanbicki, A. T., Li, C. H. & Thompson, P. E. Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact. Nat. Phys. 3, 542-546 (2007).
    • (2007) Nat. Phys. , vol.3 , pp. 542-546
    • Jonker, B.T.1    Kioseoglou, G.2    Hanbicki, A.T.3    Li, C.H.4    Thompson, P.E.5
  • 37
    • 77956369906 scopus 로고    scopus 로고
    • Are Al[sub 2]O[sub 3] and MgO tunnel barriers suitable for spin injection in graphene?
    • Dlubak, B. et al. Are Al[sub 2]O[sub 3] and MgO tunnel barriers suitable for spin injection in graphene? Appl. Phys. Lett. 97, 092502 (2010).
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 092502
    • Dlubak, B.1
  • 39
    • 84859577778 scopus 로고    scopus 로고
    • Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate
    • Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS(2) atomic layers on a SiO(2) substrate. Small 8, 966-971 (2012).
    • (2012) Small , vol.8 , pp. 966-971
    • Zhan, Y.1    Liu, Z.2    Najmaei, S.3    Ajayan, P.M.4    Lou, J.5
  • 40
    • 77957908617 scopus 로고    scopus 로고
    • Boron nitride substrates for high-quality graphene electronics
    • Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722-726 (2010).
    • (2010) Nat. Nanotechnol. , vol.5 , pp. 722-726
    • Dean, C.R.1
  • 41
    • 84863439003 scopus 로고    scopus 로고
    • Highly efficient spin transport in epitaxial graphene on SiC
    • Dlubak, B. et al. Highly efficient spin transport in epitaxial graphene on SiC. Nat. Phys. 8, 557-561 (2012).
    • (2012) Nat. Phys. , vol.8 , pp. 557-561
    • Dlubak, B.1
  • 42
    • 84902252516 scopus 로고    scopus 로고
    • Tuning interlayer coupling in large-area heterostructures with CVD-Grown MoS and WS monolayers
    • Tongay, S. et al. Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS and WS Monolayers. Nano Lett. (2014).
    • (2014) Nano Lett.
    • Tongay, S.1
  • 43
    • 84878717971 scopus 로고    scopus 로고
    • Layer-by-layer assembly of vertically conducting graphene devices
    • Chen, J. J. et al. Layer-by-layer assembly of vertically conducting graphene devices. Nat. Commun. 4, 1921 (2013).
    • (2013) Nat. Commun. , vol.4 , pp. 1921
    • Chen, J.J.1


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