Engineering of tunnel junctions for prospective spin injection in germanium

Applied Physics Letters

Volumn 94, Issue 24, 2009, Pages

  Zhou, Yi ^a   Ogawa, Masaaki ^a   Bao, Mingqiang ^a   Han, Wei ^b   Kawakami, Roland K ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; FERMI LEVEL PINNING; FERROMAGNETIC METAL; GE SURFACES; JUNCTION RESISTANCES; LOW ENERGY ION IMPLANTATION; OXIDE THICKNESS; RA PRODUCT; SCHOTTKY BARRIERS; SINGLE-STEP; SPIN INJECTION; SURFACE DOPING; THIN LAYERS; TUNNELING OXIDES;

GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCHOTTKY BARRIER DIODES; SPIN DYNAMICS; TUNNELING (EXCAVATION);

TUNNEL JUNCTIONS;

EID: 67649173373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3157128     Document Type: Article

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