Negative Schottky barrier between titanium and n-type Si(0 0 1) for low-resistance ohmic contacts

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 335-338

  Tao, M ^a   Udeshi, D ^a   Agarwal, S ^a   Maldonado, E ^a   Kirk, W P ^a  

^a The University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; OHMIC CONTACTS; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; TITANIUM;

SCHOTTKY BARRIERS;

SCHOTTKY BARRIER DIODES;

EID: 0242335138     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00316-2     Document Type: Article

References (5)

1. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;Wiley, New York.
2. Cowley A.M., Sze S.M. Surface states and barrier height of metal-semiconductor systems. J. Appl. Phys. 36:1965;3212.
3. Tao M., Udeshi D., Basit N., Maldonado E., Kirk W.P. Removal of dangling bonds and surface states on Si(0. 0 1) surface by a monolayer of Se Appl. Phys. Lett. 82(10):2003;1559-1561.
4. Michaelson H.B. The work function of the elements and its periodicity. J. Appl. Phys. 48(11):1977;4729-4733.
5. Tao M, Agarwal S, Udeshi D, Basit N, Maldonado E, Kirk WP. Low Schottky barrier on n-type Si(0 0 1). Appl Phys Lett 2003; in press.