Ion implantation effects in single crystal Si investigated by Raman spectroscopy

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1232-1234

  Harriman, T A ^a   Lucca, D A ^a   Lee, J K ^b   Klopfstein, M J ^c   Herrmann, K ^d   Nastasi, M ^e  

^a Oklahoma State University   (United States)

^b University of Pittsburgh   (United States)

^c UNIVERSITY OF BREMEN   (Germany)

^d PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^e LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

Amorphization; Ar; Ion implantation; Raman spectroscopy; Si

Indexed keywords

AMORPHOUS SI; AR; CONFOCAL RAMAN SPECTROSCOPIES; DISORDERED STRUCTURES; FLUENCE; FLUENCES; LATTICE DISORDERS; PHONON BANDS; RAMAN SPECTRUM; RESIDUAL STRESS STATE; SI; SINGLE-CRYSTAL SI; SPECTRAL CENTERS; SPECTRAL SHIFTS; STRUCTURAL TRANSFORMATIONS; STRUCTURAL TRANSITIONS; WAVE-NUMBERS;

AMORPHIZATION; AMORPHOUS SILICON; ARGON; CRYSTALLINE MATERIALS; ION BOMBARDMENT; ION IMPLANTATION; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON; SINGLE CRYSTALS; SPECTRUM ANALYSIS;

SILICON WAFERS;

EID: 65249155495     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.021     Document Type: Article

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